Wafer-scale vertical van der Waals heterostructures

被引:92
作者
Liu, Lixin [1 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China
关键词
2D materials; optoelectronic devices; van der Waals heterostructures; wafer-scale; FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON-NITRIDE; CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; LARGE-AREA SYNTHESIS; HIGH-QUALITY; MONOLAYER MOS2; EPITAXIAL-GROWTH; 2-DIMENSIONAL HETEROSTRUCTURES; BLACK PHOSPHORUS;
D O I
10.1002/inf2.12164
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Wafer-scale van der Waals heterostructures (vdWHs), benefitting from the rich diversity in materials available and stacking geometry, precise controllability in devices structure and performance, and unprecedented potential in practical application, have attracted considerable attention in the field of two-dimensional (2D) materials. This article reviews the state-of-the-art research activities that focus on wafer-scale vdWHs and their (opto)electronic applications. We begin with the preparation strategies of vdWHs with wafer size and illustrate them from four key aspects, that is, mechanical-assembly stack, successive deposition, synchronous evolution, and seeded growth. We discuss the fundamental principle, underlying mechanism, advantages, and disadvantages for each strategy. We will then review the applications of large-area vdWHs based devices in electronic, optoelectronic and flexible devices field, unveiling their promising potential for practical application. Ultimately, we will demonstrate the challenges they face and provide some viable solutions on wafer-scale heterostructure synthesis and device fabrication.
引用
收藏
页码:3 / 21
页数:19
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