Free volume effects in chemically amplified DUV positive resists

被引：10

作者：

Pain, L

LeCornec, C

Rosilio, C

Paniez, PJ

机构：

[1] LETI - CEA, DMEL - CEN/G, F - 38054 Grenoble Cedex 9

[2] CEA - CEN/S, DEIN - SPE/GCO, F - 91191 Gif sur Yvette Cedex

[3] France Telecom, CNET - CNS, BP 98

来源：

MICROELECTRONIC ENGINEERING | 1996年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00243-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Free volume greatly influences the lithographic performance of chemically amplified systems. This work studies its generation and variations during the various steps of the lithographic process, i.e. from film formation the post-exposure bake.

引用

页码：271 / 274

页数：4

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[3]

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[4]

PANIEZ PJ, 1992, P SOC PHOTO-OPT INS, V1672, P623, DOI 10.1117/12.59773

[5]

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[6]

PAPANU JS, 1987, SPIE, V771, P93

[7]

Zuniga M., 1994, P SOC PHOTO-OPT INS, V2195, P320

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