Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

被引：0
作者：
Gullu, O. [1 ]
Turut, A. [2 ]
机构：
[1] Batman Univ, Fac Sci & Arts, Dept Phys, Batman, Turkey
[2] Istanbul Medeniyet Univ, Fac Sci, Dept Engn Phys, TR-34000 Istanbul, Turkey
来源：
ACTA PHYSICA POLONICA A | 2015年 / 128卷 / 03期
关键词：
BARRIER HEIGHT ENHANCEMENT; SCHOTTKY DIODE; ELECTRICAL-PROPERTIES; CHARGE-TRANSPORT; SERIES RESISTANCE; CURRENT-VOLTAGE; SI/AL STRUCTURE; LAMBDA-DNA; THIN-FILMS; FABRICATION;
D O I：
10.12693/APhysPolA.128.383
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage ( I-V) and capacitance-voltage ( C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24 x 10(13) eV(-1) cm(-2) to 5.56 x 10(12) eV(-1) cm(-2).
引用
收藏
页码：383 / 388
页数：6
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