Band-pass Fabry-Perot magnetic tunnel junctions

被引:27
作者
Sharma, Abhishek [1 ]
Tulapurkar, Ashwin. A. [1 ]
Muralidharan, Bhaskaran [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India
关键词
SPIN-TRANSFER TORQUE; MAGNETORESISTANCE; DRIVEN; SUPERLATTICE; TRANSPORT; EMISSION;
D O I
10.1063/1.5023159
中图分类号
O59 [应用物理学];
学科分类号
摘要
We propose a high-performance magnetic tunnel junction by making electronic analogs of optical phenomena such as anti-reflections and Fabry-Perot resonances. The devices we propose feature anti-reflection enabled superlattice heterostructures sandwiched between the fixed and the free ferromagnets of the magnetic tunnel junction structure. Our predictions are based on non-equilibrium Green's function spin transport formalism coupled self-consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation. Owing to the physics of bandpass spin filtering in the bandpass Fabry-Perot magnetic tunnel junction device, we demonstrate an ultra-high boost in the tunnel magneto-resistance (approximate to 5 x 10(4)%) and nearly 1200% suppression of spin transfer torque switching bias in comparison to a traditional trilayer magnetic tunnel junction device. The proof of concepts presented here can lead to next-generation spintronic device design harvesting the rich physics of superlattice heterostructures and exploiting spintronic analogs of optical phenomena. Published by AIP Publishing.
引用
收藏
页数:5
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