A multilayered deposition structure was developed for fabricating FePt:B2O3 films. We successfully obtained nanostructured FePt:B2O3 films with FePt grains aligned perpendicular to film plane by postannealing the as-deposited multilayers at 550 degreesC for 30 min. It was found that development of (001) texture depends strongly on the total film thickness, initial B2O3 layer thickness, and Fe concentration. Nearly perfect (001) orientation of FePt-ordered grains can be obtained in the films with small total film thickness, large initial B2O3 layer thickness, and slightly higher Fe concentration. Our results show that highly (001) oriented films with ordered fct phase have significant potential as perpendicular media for extremely high-density recording. (C) 2002 American Institute of Physics.
机构:
Taiyuan Univ Sci & Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R ChinaTaiyuan Univ Sci & Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
Liu, Wenfeng
Wang, Fang
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Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaTaiyuan Univ Sci & Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
Wang, Fang
Xu, Xiaohong
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Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Peoples R ChinaTaiyuan Univ Sci & Technol, Coll Mat Sci & Engn, Taiyuan 030024, Peoples R China
机构:
Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Perumal, A.
Takahashi, Y. K.
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Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Takahashi, Y. K.
Seki, T. O.
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Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Seki, T. O.
Hono, K.
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Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, JapanNatl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan
机构:
NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Cher, K. M.
Lim, B. C.
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NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Lim, B. C.
Hu, J. F.
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NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Hu, J. F.
Lwin, P. W.
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NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Lwin, P. W.
Zhou, T. J.
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NUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore
Zhou, T. J.
Chen, J. S.
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Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117574, SingaporeNUS, A STAR Agcy Sci Technol & Res, Data Storage Inst, Singapore 117608, Singapore