Surface morphologies and properties of pure and antimony-doped tin oxide films derived by sol-gel dip-coating processing

被引:57
作者
Zhang, Daoli [1 ]
Tao, Liang [1 ]
Deng, Zhibing [1 ]
Zhang, Jianbing [1 ]
Chen, Liangyan [1 ]
机构
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Hubei Province, Peoples R China
关键词
antimony-doped tin oxide; transparent conducting thin film; sol-gel dip-coating technique; morphological analysis; microstructural analysis; optical and electrical properties;
D O I
10.1016/j.matchemphys.2005.12.043
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple laboratory technique for the routine preparation of antimony-doped tin oxide (ATO) on float glass substrates (25 mm x 76 mm x 1 mm) was described. As-prepared thin films were dried at temperature of 100 +/- 5 degrees C and annealed at temperatures of 400-550 degrees C. Microstructural and morphological analyses of as-prepared films were performed at different conditions. The evolution of grain size and the morphologies of ATO films were analyzed by means of atom force microscopy (AFM) and digital microscope. The studies suggested that higher Sb-doped level and higher annealing temperature led to a decrease in the surface roughness of the deposited films. The XRD patterns revealed that as-prepared ATO films were in the crystallization of a tetragonal rutile structure of SnO2 with highly (110) preferred orientation. Their optical properties were analyzed by U-3310 spectrophotometer. The transmission of the ATO thin films was obtained as high as 80-90% in visible region, but decreased substantially in IR region. The sheet resistance of the investigated thin films was determined by four-probe method, showing that it was about 85-100 Omega square(-1) which decreased with the increase of antimony-doped concentration. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:275 / 280
页数:6
相关论文
共 14 条
[1]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[2]   On the microstructure and electrical properties of undoped and antimony-doped tin oxide thin film deposited by sol-gel process [J].
Du, G ;
Zhang, DL ;
Zhao, L ;
Xu, JM ;
Zhou, DX .
HIGH-PERFORMANCE CERAMICS III, PTS 1 AND 2, 2005, 280-283 :835-838
[3]   A study on low cost-high conducting fluorine and antimony-doped tin oxide thin films [J].
Elangovan, E ;
Ramamurthi, K .
APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :183-196
[4]   Effect of thickness on the electrical and optical properties of Sb doped SnO2 (ATO) thin films [J].
Giraldi, TR ;
Escote, MT ;
Bernardi, MIB ;
Bouquet, V ;
Leite, ER ;
Longo, E ;
Varela, JA .
JOURNAL OF ELECTROCERAMICS, 2004, 13 (1-3) :159-165
[5]   Electrical and optical properties of tin oxide and antimony doped tin oxide films [J].
Jain, G ;
Kumar, R .
OPTICAL MATERIALS, 2004, 26 (01) :27-31
[6]   EFFECT OF ANTIMONY ADDITION ON ELECTRICAL AND OPTICAL-PROPERTIES OF TIN OXIDE FILM [J].
KIM, KH ;
LEE, SW ;
SHIN, DW ;
PARK, CG .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (04) :915-921
[7]   SOL-GEL-DERIVED TIN OXIDE THIN-FILMS [J].
PARK, SS ;
MACKENZIE, JD .
THIN SOLID FILMS, 1995, 258 (1-2) :268-273
[8]   Electronic structure of sol-gel derived SnO2 thin films [J].
Senguttuvan, TD ;
Malhotra, LK .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1997, 58 (01) :19-24
[9]   ELECTRICAL AND OPTICAL-PROPERTIES OF UNDOPED AND ANTIMONY-DOPED TIN OXIDE-FILMS [J].
SHANTHI, E ;
DUTTA, V ;
BANERJEE, A ;
CHOPRA, KL .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) :6243-6251
[10]  
Shanthi S, 1999, CRYST RES TECHNOL, V34, P1037, DOI 10.1002/(SICI)1521-4079(199909)34:8<1037::AID-CRAT1037>3.0.CO