Radiation effects on advanced flash memories

被引：120
|
作者：
Nguyen, DN [1 ]
Guertin, SM [1 ]
Swift, GM [1 ]
Johnston, AH [1 ]
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 06期
关键词：
D O I：
10.1109/23.819148
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Radiation tests of advanced flash memories including, multi-level flash technology, are compared with results from previous generations. Total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump. Small numbers of read errors were observed during single event tests of the multi-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts and rather than loss of electrons off the floating gate.
引用
收藏
页码：1744 / 1750
页数：7
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