High-power low vertical beam divergence 800-nm-band double-barrier-SCH GaAsP-(AlGa)As laser diodes

被引：20

作者：

Malag, Andrzej ^{[1
]}

Jasik, Agata ^{[1
]}

Teodorczyk, Marian ^{[1
]}

Jagoda, Andrzej ^{[1
]}

Kozlowska, Anna ^{[1
]}

机构：

[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 13-16期

关键词：

AlGaAs-GaAsP heterostructure; high-power lasers; laser beam divergence; laser diodes (LDs); optical planar waveguides; power conversion efficiency (pce);

D O I：

10.1109/LPT.2006.878142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power double-barrier separate confinement heterostructure (SCH) GaAsP-AlGaAs-GaAs laser diodes designed for low vertical beam divergence emission at 800-nm band are presented. Insertion of thin, wide-gap (low refractive index) barrier layers at the interfaces between the waveguide and cladding layers of an initial SCH causes an optical confinement weakening. As a result, the vertical divergences down to 16 degrees and 13 degrees have been obtained, depending on the design version. Similar threshold current densities, higher characteristic temperatures To compared to the high-power large optical cavity (LOC) lasers of comparable beam divergences and promising high-power performance make this design an alternative to LOC solution.

引用

页码：1582 / 1584

页数：3

共 13 条

[1] SINGLE-QUANTUM-WELL LASER WITH 11.2 DEGREE TRANSVERSE BEAM DIVERGENCE [J].