Investigation of vibration-assisted nano-grinding of gallium nitride via molecular dynamics

被引:41
作者
Huang, Yuhua [1 ]
Wang, Miaocao [1 ]
Xu, Yixin [1 ]
Zhu, Fulong [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mech Sci & Engn, Inst Microsyst, 1037 Luoyu Rd, Wuhan 430074, Hubei Prov, Peoples R China
基金
中国国家自然科学基金;
关键词
Gallium nitride; Vibration-assisted; Molecular dynamics; Nano-grinding; Removal rate; Surface quality; SUBSURFACE DAMAGE; GAN; MECHANISM; BEHAVIOR; SILICON; BULK; SEMICONDUCTORS; HARDNESS; CARBON; AIN;
D O I
10.1016/j.mssp.2020.105372
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The main goal of the surface machining of gallium nitride (GaN) is to obtain higher removal rate and good surface quality. Thus, we attempted to investigate the impact of the one-dimension sinusoidal assistant vibration on the nano-grinding of GaN by molecular dynamics simulations. By the comparison between the vibration-assisted nano-grinding and the conventional nano-grinding, it is found that the grinding force of the vibration-assisted nano-grinding fluctuated periodically, and the flow field of the vibration-assisted nano-grinding around the diamond abrasive was changed by the assisting vibration. Furthermore, the GaN fluidity of the vibration with period of 20 ps was better than the other condition and had a thinner sub-surface damaged layer than the conventional nano-grinding. Although the final surface quality of the vibration-assisted nano-grinding was worse than the conventional nano-grinding, it was proven that the vibration-assisted nano-grinding achieved higher removal rate and acceptable quality simultaneously by the vibration-assisted nano-grinding.
引用
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页数:9
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