Diffusion of oxygen in amorphous Al2O3, Ta2O5, and Nb2O5

被引:102
作者
Nakamura, R. [1 ]
Toda, T. [2 ]
Tsukui, S. [1 ]
Tane, M. [2 ]
Ishimaru, M. [3 ]
Suzuki, T. [2 ]
Nakajima, H. [4 ]
机构
[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Mat Sci, Naka Ku, Sakai, Osaka 5998531, Japan
[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan
[3] Kyushu Inst Technol, Dept Mat Sci & Engn, Kitakyushu, Fukuoka 8048550, Japan
[4] Wakasa Wan Energy Res Ctr, Tsuruga, Fukui 9140192, Japan
关键词
OXIDE-FILMS; NANOVOID FORMATION; TANTALUM OXIDE; NIOBIUM OXIDE; ANODIC-OXIDE; ALUMINUM; THIN;
D O I
10.1063/1.4889800
中图分类号
O59 [应用物理学];
学科分类号
摘要
The self-diffusivity of oxygen in amorphous Al2O3 (a-Al2O3), a-Ta2O5, and a-Nb2O5 was investigated along with structural analysis in terms of pair distribution function (PDF). The low activation energy, similar to 1.2 eV, for diffusion in the oxides suggests a single atomic jump of oxygen ions mediated via vacancy-like defects. However, the pre-exponential factor for a-Ta2O5 and a-Nb2O5 with lower bond energy was two orders of magnitude larger than that for a-Al2O3 with higher bond energy. PDF analyses revealed that the short-range configuration in a-Ta2O5 and a-Nb2O5 was more broadly distributed than that in a-Al2O3. Due to the larger variety of atomic configurations of a-Ta2O5 and a-Nb2O5, these oxides have a higher activation entropy for diffusion than a-Al2O3. The entropy term for diffusion associated with short-range structures was shown to be a dominant factor for diffusion in amorphous oxides. (C) 2014 AIP Publishing LLC.
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页数:8
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