CMOS technology for MS/RF SoC

被引:1
|
作者
Diaz, CH [1 ]
机构
[1] Taiwan Semicon Mfg Co, Hsinchu, Taiwan
来源
2004 IEEE WORKSHOP ON MICROELECTRONIC AND ELECTRON DEVICES | 2004年
关键词
D O I
10.1109/WMED.2004.1297341
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of short-range wireless communication has become exceedingly important due to the emerging market of wireless WLAN and blue-tooth. CMOS technology has emerged as the top solution due to its cost advantage, performance improvement and ease of integration for high-performance digital circuits and highspeed analog/RF circuits. Accelerated scaling of CMOS technology has contributed to remove otherwise fundamental barriers preempting its widespread application to MS/RF segments. Improvements in device speed, matching, and minimum noise figure are all consistent with fundamental scaling trends. Other figures-of-merit such as linearity and 1/f noise do not scale favorably but are not considered roadblocks when viewed from a circuit design perspective. Furthermore, interconnect architectural scaling trends in logic technology have facilitated improvements in passive-component performance metrics. These improvements compounded with innovations in circuit design have made CMOS technology the primary choice for cost driven mixed-signal / radio-frequency (MS/RF) applications [1]. This paper reviews active and passive elements of CMOS MS/RF SoC technology from scaling perspective.
引用
收藏
页码:24 / 27
页数:4
相关论文
共 50 条
  • [1] CMOS technology for MS/RF SoC
    Diaz, CH
    Tang, DD
    Sun, J
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (03) : 557 - 566
  • [2] RF CMOS transceiver for 802.15.4 SoC
    Barthélemy, H
    Bourdel, S
    Dehaese, N
    Egels, M
    Gaubert, J
    Pannier, P
    Bas, G
    2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, : 575 - 578
  • [3] A 65nm CMOS SOC technology featuring strained silicon transistors for RF applications
    Post, I.
    Akbar, M.
    Curello, G.
    Gannavaram, S.
    Hafez, W.
    Jalan, U.
    Komeyli, K.
    Lin, J.
    Lindert, N.
    Park, J.
    Rizk, J.
    Sacks, G.
    Tsai, C.
    Yeh, D.
    Bai, P.
    Jan, C. -H.
    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2006, : 203 - +
  • [4] Advanced RF CMOS technology
    Iwai, H
    Ohguro, T
    Morifuji, E
    Yoshitomi, T
    Kimijima, H
    Momose, HS
    Inoh, K
    Nii, H
    Katsumata, Y
    DESIGN, CHARACTERIZATION, AND PACKAGING FOR MEMS AND MICROELECTRONICS, 1999, 3893 : 10 - 19
  • [5] Advanced RF CMOS technology
    Iwai, H
    Ohguro, T
    Morifuji, E
    Yoshitomi, T
    Kimijima, H
    Momose, HS
    Inoh, K
    Nii, H
    Katsumata, Y
    EDUCATION IN MICROELECTRONICS AND MEMS, 1999, 3894 : 10 - 19
  • [6] Advanced RF CMOS technology
    Iwai, H
    Ohguro, T
    Morifuji, E
    Yoshitomi, T
    Kimijima, H
    Momose, HS
    Inoh, K
    Nii, H
    Katsumata, Y
    ELECTRONICS AND STRUCTURES FOR MEMS, 1999, 3891 : 10 - 19
  • [7] Advanced RF CMOS technology
    Iwai, H
    Ohguro, T
    Morifuji, E
    Yoshitomi, T
    Kimijima, H
    DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS, 1999, 3892 : 10 - 19
  • [8] RF CMOS technology for MMIC
    Chang, CY
    Su, JG
    Wong, SC
    Huang, TY
    Sun, YC
    MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) : 721 - 733
  • [9] Analysis of RF scattering parameters and noise and power performances of RF-power MOS in 0.15-μm RF CMOS technology for RF SOC applications
    Lin, YS
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2004, 41 (03) : 191 - 196
  • [10] Impact of technology scaling on RF CMOS
    Hassan, H
    Anis, M
    Elmasry, M
    IEEE INTERNATIONAL SOC CONFERENCE, PROCEEDINGS, 2004, : 97 - 101