Raman properties of silicon nanoparticles

被引：132

作者：

Meier, C ^{[1
]}

Lüttjohann, S ^{[1
]}

Kravets, VG ^{[1
]}

Nienhaus, H ^{[1
]}

Lorke, A ^{[1
]}

Wiaers, H ^{[1
]}

机构：

[1] Univ Duisburg Gesamthsch, D-47048 Duisburg, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2006年 / 32卷 / 1-2期

关键词：

Raman; silicon; nanoparticles; phonon confinement;

D O I：

10.1016/j.physe.2005.12.030

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Raman spectra of silicon nanoparticles in the size range between d = 3.5-60 nm have been studied experimentally. Scattering processes up to second order are being observed. The experimental results are analyzed in the framework of the phonon confinement model. While this model describes qualitatively the observations for first-order scattering processes, it is not applicable for scattering processes of higher order. From the analysis of second-order scattering, we determine a redshift of the TO phonon at the X and L points. (c) 2006 Elsevier B.V. All rights reserved.

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收藏

页码：155 / 158

页数：4

相关论文

共 11 条

[1] Adsorption of gases in multimolecular layers [J].

Brunauer, S ;

Emmett, PH ;

Teller, E .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1938, 60 :309-319

[2] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[3] ULTRAFINE METAL PARTICLES [J].

GRANQVIST, CG ;

BUHRMAN, RA .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :2200-2219

[4]

HELLWEGE KH, 1982, LANDOLTBORNSTEIN Z A, V17

[5] Synthesis of high purity silicon nanoparticles in a low pressure microwave reactor [J].

Knipping, J ;

Wiggers, H ;

Rellinghaus, B ;

Roth, P ;

Konjhodzic, D ;

Meier, C .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2004, 4 (08) :1039-1044

[6] Infrared properties of silicon nanoparticles [J].

Kravets, VG ;

Meier, C ;

Konjhodzic, D ;

Lorke, A ;

Wiggers, H .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (08)

[7] Raman, photoluminescence and optical absorption studies on nanocrystalline silicon [J].

Mishra, P ;

Jain, KP .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (03) :202-213

[8] Optical gain in silicon nanocrystals [J].

Pavesi, L ;

Dal Negro, L ;

Mazzoleni, C ;

Franzò, G ;

Priolo, F .

NATURE, 2000, 408 (6811) :440-444

[9] THE ONE PHONON RAMAN-SPECTRUM IN MICROCRYSTALLINE SILICON [J].

RICHTER, H ;

WANG, ZP ;

LEY, L .

SOLID STATE COMMUNICATIONS, 1981, 39 (05) :625-629

[10] Field-effect electroluminescence in silicon nanocrystals [J].

Walters, RJ ;

Bourianoff, GI ;

Atwater, HA .

NATURE MATERIALS, 2005, 4 (02) :143-146