Evolution of Detrimental Secondary Phases in Unstable Cu2ZnSnS4 Films during Annealing

被引:17
作者
Jung, Hyo Rim [1 ]
Shin, Seung Wook [4 ]
Gurav, K. V. [1 ,3 ]
Gang, Myeng Gil [1 ]
Lee, Jeong Yong [2 ]
Moon, Jong Ha [1 ]
Kim, Jin Hyeok [1 ]
机构
[1] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Dept Mat Sci & Engn, Kwangju 500757, South Korea
[2] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Taejon 305701, South Korea
[3] Devchand Coll, Dept Phys, Arjunnagar, India
[4] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
基金
新加坡国家研究基金会;
关键词
Cu2ZnSnS4 (CZTS); thin film solar cells (TFSCs); Cu-S phase segregation; transmission electron microscopy (TEM); earth abundant elements; LOW-COST SYNTHESIS; THIN-FILM; SOLAR-CELL; NANOCRYSTALS; SULFURIZATION; FACILE; GROWTH;
D O I
10.1007/s13391-015-5340-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The formation and phase evolution of Cu-S based compounds in kesterite Cu2ZnSnS4 (CZTS) absorbing thin films is a critical factor affecting the performance of these materials in thin film solar cells (TFSCs). However, to the best of our knowledge, few studies have investigated the segregation of Cu-S based compounds in kesterite thin films during the sulfurization process. In this study, stacked Cu/SnS2/ZnS precursor thin films were annealed to systematically study the segregation and phase evolution of Cu-S based compounds in kesterite thin films subjected to functional sulfurization times at 550 degrees C. The stacked precursor thin films appeared to be fully transformed to the pure kesterite phase when the sulfurization times are over 30 min. when analyzed using X-ray diffraction and Raman spectroscopy. However, transmission electron microscopy (TEM) characterization revealed that Cu-S based compounds segregated in the kesterite CZTS thin films annealed for 120 min at 550 degrees C. Based on the experimental results obtained for functional sulfurization times, a mechanism for Cu-S based compounds segregation and the phase evolution process is proposed.
引用
收藏
页码:139 / 146
页数:8
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