High Speed Waveguide-Integrated Ge/Si Avalanche Photodetector

被引：0

作者：

Duan, Ning ^{[1
]}

Liow, Tsung-Yang ^{[1
]}

Lim, Andy Eu-Jin ^{[1
]}

Ding, Liang ^{[1
]}

Lo, Guo Qiang ^{[1
]}

机构：

[1] ASTAR, Inst Microelect, Singapore 117685, Singapore

来源：

2013 OPTICAL FIBER COMMUNICATION CONFERENCE AND EXPOSITION AND THE NATIONAL FIBER OPTIC ENGINEERS CONFERENCE (OFC/NFOEC) | 2013年

关键词：

PHOTODIODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report waveguide Ge/Si avalanche photodiodes with a high 3-dB bandwidth of similar to 20 GHz and a high responsivity of 22 A/W. Such device can be monolithically integrated with other silicon photonic components on SOI substrates.

引用

页数：3

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