High-frequency short-pulse generation with a highly stacked InAs quantum dot mode-locked laser diode

被引：6
|
作者：
Akahane, Kouichi [1 ]
Matsumoto, Atsushi [1 ]
Umezawa, Toshimasa [1 ]
Yamamoto, Naokatsu [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, 4-2-1 Nukuikitamachi, Koganei, Tokyo 1848795, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / SB期
关键词：
Quantum dot; Mode-locked laser diode; Highly-stacking; Molecular beam epitaxy; Strain-compensation; LOCKING;
D O I：
10.35848/1347-4065/abd2a1
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A high-frequency pulse and a short pulse were generated using a quantum dot (QD) mode-locked laser diode (MLLD). We adopted a highly stacked QD structure using a strain-compensation technique within the active region of the QD-MLLD to fabricate a short-cavity MDDL. A two-section MLLD structure was fabricated with a cavity length of 500 mu m. This laser exhibited lasing with a threshold current of approximately 34 mA with zero bias within the saturable absorber region. The spectrum of this laser has a well-defined, wide-range longitudinal mode. A short pulse of 464 fs in width and a high repetition rate of 81 GHz was observed through an interference measurement using a Michelson interferometer.
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页数：6
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