CRYSTALLOCHEMICAL MODEL OF ALTERNATIVE SUBSTRATES FOR EPITAXIAL GROWTH OF GaN THIN FILMS

被引：0
|
作者：
Volkova, E. A. [1 ]
Leonyuk, N. I. [1 ]
机构：
[1] Moscow MV Lomonosov State Univ, Geol Fac, Dept Crystallog, Moscow 119992, Russia
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2002年 / 58卷
关键词：
GALLIUM NITRIDE; SUBSTRATE; STRUCTURE;
D O I：
10.1107/S010876730209894X
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：C349 / C349
页数：1
相关论文
共 50 条
  • [1] Epitaxial growth of GaN films on unconventional oxide substrates
    Wang, Wenliang
    Yang, Weijia
    Wang, Haiyan
    Li, Guoqiang
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (44) : 9342 - 9358
  • [2] Growth and structural investigations of epitaxial hexagonal YMnO3 thin films deposited on wurtzite GaN(001) substrates
    Balasubramanian, K. R.
    Chang, Kai-Chieh
    Mohammad, Feroz A.
    Porter, Lisa M.
    Salvador, Paul A.
    DiMaio, Jeffrey
    Davis, Robert F.
    THIN SOLID FILMS, 2006, 515 (04) : 1807 - 1813
  • [3] Epitaxial growth of GaN films on lattice-matched ScAlMgO4 substrates
    Wang, Wenliang
    Yan, Tao
    Yang, Weijia
    Zhu, Yunnong
    Wang, Haiyan
    Li, Guoqiang
    Ye, Ning
    CRYSTENGCOMM, 2016, 18 (25): : 4688 - 4694
  • [4] Substrates with Diamond Heat Sink for Epitaxial GaN Growth
    I. O. Maiboroda
    I. A. Chernykh
    V. S. Sedov
    A. S. Altakhov
    A. A. Andreev
    Yu. V. Grishchenko
    E. M. Kolobkova
    A. K. Mart’yanov
    V. I. Konov
    M. L. Zanaveskin
    Technical Physics Letters, 2021, 47 : 353 - 356
  • [5] Substrates with Diamond Heat Sink for Epitaxial GaN Growth
    Maiboroda, I. O.
    Chernykh, I. A.
    Sedov, V. S.
    Altakhov, A. S.
    Andreev, A. A.
    Grishchenko, Yu, V
    Kolobkova, E. M.
    Mart'yanov, A. K.
    Konov, V., I
    Zanaveskin, M. L.
    TECHNICAL PHYSICS LETTERS, 2021, 47 (05) : 353 - 356
  • [6] Microstructure of epitaxial GaN films grown on chemomechanically polished GaN(0001) substrates
    Huang, Li
    Liu, Fang
    Zhu, Jingxi
    Kamaladasa, Ranga
    Preble, Edward A.
    Paskova, Tanya
    Evans, Keith
    Porter, Lisa
    Picard, Yoosuf N.
    Davis, Robert F.
    JOURNAL OF CRYSTAL GROWTH, 2012, 347 (01) : 88 - 94
  • [7] Achieving atomically flat surfaces for LiGaO2 substrates for epitaxial growth of GaN films
    Li, Guoqiang
    Mu, Shichun
    Shih, Shao-Ju
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2010, 170 (1-3): : 9 - 14
  • [8] Interfacial structure of GaN and InN thin films grown on ZnO substrates
    Ohgaki, T
    Sugimura, S
    Ryoken, H
    Ohashi, N
    Sakaguchi, I
    Sekiguchi, T
    Haneda, H
    ELECTROCERAMICS IN JAPAN VIII, 2006, 301 : 79 - 82
  • [9] Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition
    Yang, Weijia
    Wang, Wenliang
    Wang, Haiyan
    Zhu, Yunnong
    Li, Guoqiang
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2016, 43 : 82 - 89
  • [10] Epitaxial growth of ZnO thin films on AlN substrates deposited at low temperature by magnetron sputtering
    Rahmane, S.
    Abdallah, B.
    Soussou, A.
    Gautron, E.
    Jouan, P. -Y.
    Le Brizoual, L.
    Barreau, N.
    Soltani, A.
    Djouadi, M. A.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (07): : 1604 - 1608
12345