Helium ion bombardment induced amorphization of silicon crystals

被引：10

作者：

Reutov, VF ^{[1
]}

Sokhatskii, AS ^{[1
]}

机构：

[1] Joint Inst Nucl Res, Flerov Lab Nucl React, Dubna 141980, Moscow Oblast, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2002年 / 28卷 / 07期

关键词：

Silicon; Microscopy; Electron Microscopy; Transmission Electron Microscopy; Helium;

D O I：

10.1134/1.1498804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The possibility of amorphization of a silicon crystal bombarded at room temperature with helium ions is studied by monitoring structural changes in the target crystal by means of transmission electron microscopy. Thin free-standing Si(100) plates were irradiated from the plane edge ({011} face) with 17-keV He+ ions in a dose range from 3 x 10(16) to 3 x 10(17) cm(-2). It was established that amorphization of the silicon crystal takes place for a total fluence exceeding 10(17) cm(-2), provided that the ratio of the point defect production rate to the rate of helium introduction into silicon exceeds 90 displacements per He atom. (C) 2002 MAIK "Nauka/Interperiodica".

引用

页码：615 / 617

页数：3

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