Current-voltage and photovoltaic characteristics of n-Ge10Se80In10/p-Si heterojunction

被引：8

作者：

El-Nahass, M. M. ^{[1
]}

El-Zaidia, E. F. M. ^{[1
]}

Ali, M. H. ^{[2
]}

Zedan, I. T. ^{[3
]}

机构：

[1] Ain Shams Univ, Dept Phys, Fac Educ, Cairo 11757, Egypt

[2] Ain Shams Univ, Dept Phys, Fac Sci, Cairo 11556, Egypt

[3] High Inst Engn & Technol, Dept Basic Sci, Al Arish, North Sinai, Egypt

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 24卷

关键词：

Heterojunction; Barrier height; Solar cell; GE-SE-IN; SOLAR-CELLS; TRANSPORT MECHANISMS; OPTICAL-PROPERTIES; THIN-FILMS; GLASSES; PHOTOCONDUCTIVITY; DIODES; PHOTOEMISSION; CONDUCTION;

D O I：

10.1016/j.mssp.2014.03.045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the analysis of electrical properties Au/n-Ge(10)Se(80)ln(10)/P-Si/Al heterojunction is studied. The dark forward current-voltage characteristics showed a thermoionic emission mechanism at low voltages (V <= 0.4 V) followed by a SCLC mechanism at high voltages (V <= 0.5 V). The junction parameters like series resistance, rectification ratio, ideality factor, effective barrier height, and total trap concentration were determined. The capacitance-voltage (C-V) characteristics of n-Ge(10)Se(80)ln(10)/P-Si devices were also investigated. The barrier height value obtained from the C-V measurements was found to be 0.56 eV. Solar cell parameters were also evaluated under illumination of 6 mW/cm(2) and the power conversion efficiency was estimated as 1.5%. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：254 / 259

页数：6

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