Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

被引：69
作者：
Derrien, Thibault J. -Y. [1 ]
Krueger, Joerg [1 ]
Itina, Tatiana E. [2 ]
Hoehm, Sandra [3 ]
Rosenfeld, Arkadi [3 ]
Bonse, Joern [1 ]
机构：
[1] BAM Bundesanstalt Mat Forsch & Prufung, D-12205 Berlin, Germany
[2] Univ St Etienne, LabHC, UMR CNRS 5516, F-42000 St Etienne, France
[3] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 117卷 / 01期
关键词：
SI; SEMICONDUCTORS; DYNAMICS; MORPHOLOGY; ABLATION;
D O I：
10.1007/s00339-013-8205-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and similar to 4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.
引用
收藏
页码：77 / 81
页数：5
相关论文
共 29 条
  • [11] Laser-induced modification of transparent crystals and glasses
    Bulgakova, N. M.
    Stoian, R.
    Rosenfeld, A.
    [J]. QUANTUM ELECTRONICS, 2010, 40 (11) : 966 - 985
  • [12] A general continuum approach to describe fast electronic transport in pulsed laser irradiated materials: The problem of Coulomb explosion
    Bulgakova, NM
    Stoian, R
    Rosenfeld, A
    Hertel, IV
    Marine, W
    Campbell, EEB
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2005, 81 (02): : 345 - 356
  • [13] Nano-ripple formation on different band-gap semiconductor surfaces using femtosecond pulses
    Chakravarty, U.
    Ganeev, R. A.
    Naik, P. A.
    Chakera, J. A.
    Babu, M.
    Gupta, P. D.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (08)
  • [14] Sub-damage-threshold femtosecond laser ablation from crystalline Si: surface nanostructures and phase transformation
    Costache, F
    Kouteva-Arguirova, S
    Reif, J
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (4-6): : 1429 - 1432
  • [15] Derrien TJ, 2010, J OPTOELECTRON ADV M, V12, P610
  • [16] Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
    Derrien, Thibault J. -Y.
    Itina, Tatiana E.
    Torres, Remi
    Sarnet, Thierry
    Sentis, Marc
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 114 (08)
  • [17] Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon
    Derrien, Thibault J-Y
    Krueger, Joerg
    Itina, Tatiana E.
    Hoehm, Sandra
    Rosenfeld, Arkadi
    Bonse, Joern
    [J]. OPTICS EXPRESS, 2013, 21 (24): : 29643 - 29655
  • [18] Edwards D.F., 1985, Handbook of optical constants of solids
  • [19] Single- and multi-pulse formation of surface structures under static femtosecond irradiation
    Guillermin, M.
    Garrelie, F.
    Sanner, N.
    Audouard, E.
    Soder, H.
    [J]. APPLIED SURFACE SCIENCE, 2007, 253 (19) : 8075 - 8079
  • [20] Area dependence of femtosecond laser-induced periodic surface structures for varying band gap materials after double pulse excitation
    Hoehm, S.
    Rosenfeld, A.
    Krueger, J.
    Bonse, J.
    [J]. APPLIED SURFACE SCIENCE, 2013, 278 : 7 - 12
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