Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

被引：68

作者：

Derrien, Thibault J. -Y. ^{[1
]}

Krueger, Joerg ^{[1
]}

Itina, Tatiana E. ^{[2
]}

Hoehm, Sandra ^{[3
]}

Rosenfeld, Arkadi ^{[3
]}

Bonse, Joern ^{[1
]}

机构：

[1] BAM Bundesanstalt Mat Forsch & Prufung, D-12205 Berlin, Germany

[2] Univ St Etienne, LabHC, UMR CNRS 5516, F-42000 St Etienne, France

[3] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2014年 / 117卷 / 01期

关键词：

SI; SEMICONDUCTORS; DYNAMICS; MORPHOLOGY; ABLATION;

D O I：

10.1007/s00339-013-8205-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and similar to 4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.

引用

页码：77 / 81

页数：5

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