Effects of catalyst-generated atomic hydrogen treatment on amorphous silicon fabricated by Liquid-Si printing

被引:5
|
作者
Murayama, Hiroko [1 ]
Ohyama, Tatsushi [1 ]
Terakawa, Akira [1 ]
Takagishi, Hideyuki [2 ,3 ]
Masuda, Takashi [2 ,4 ]
Ohdaira, Keisuke [2 ,3 ]
Shimoda, Tatsuya [2 ,3 ,4 ]
机构
[1] Panasonic Corp, Device Solut Ctr, R&D Div, Moriguchi, Osaka 5708501, Japan
[2] Japan Adv Inst Sci & Technol, Nomi, Ishikawa 9231292, Japan
[3] Japan Sci & Technol Agcy, ALCA, Nomi, Ishikawa 9231292, Japan
[4] Japan Sci & Technol Agcy, ERATO, Nomi, Ishikawa 9231292, Japan
基金
日本科学技术振兴机构;
关键词
SOLAR-CELLS; FILMS; TEMPERATURE; CYCLOPENTASILANE; SILANE; PLASMA;
D O I
10.7567/JJAP.53.05FM06
中图分类号
O59 [应用物理学];
学科分类号
摘要
The film property distributions along the thickness direction of the catalyst-generated atomic hydrogen (Cat-H*) treatment effects on hydrogenated amorphous silicon (a-Si: H) fabricated by plasma-enhanced chemical vapor deposition (plasma-CVD) and Liquid-Si printing (LSP) were systematically investigated. The a-Si: H films fabricated by LSP (L-a-Si: H) had nanosize voids; however, these films showed a decrease in void size around the surface region after Cat-H* treatment, in contrast to stable plasma-CVD films without voids. The decrease in nonaffected area by Cat-H* treatment in L-a-Si: H films improved the performance of a-Si: H solar cells with L-a-Si: H. Additionally, we achieved a 3.1% conversion efficiency for a-Si: H solar cells with L-a-Si: H as the active layer by stacking nondoped a-Si: H, fabricated by plasma-CVD, on the active layer. (C) 2014 The Japan Society of Applied Physics
引用
收藏
页数:4
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