The film property distributions along the thickness direction of the catalyst-generated atomic hydrogen (Cat-H*) treatment effects on hydrogenated amorphous silicon (a-Si: H) fabricated by plasma-enhanced chemical vapor deposition (plasma-CVD) and Liquid-Si printing (LSP) were systematically investigated. The a-Si: H films fabricated by LSP (L-a-Si: H) had nanosize voids; however, these films showed a decrease in void size around the surface region after Cat-H* treatment, in contrast to stable plasma-CVD films without voids. The decrease in nonaffected area by Cat-H* treatment in L-a-Si: H films improved the performance of a-Si: H solar cells with L-a-Si: H. Additionally, we achieved a 3.1% conversion efficiency for a-Si: H solar cells with L-a-Si: H as the active layer by stacking nondoped a-Si: H, fabricated by plasma-CVD, on the active layer. (C) 2014 The Japan Society of Applied Physics
机构:
Japan Adv Inst Sci & Technol, Nomi City, Ishikawa 9231292, Japan
JST ERATO Shimoda Nanoliquid Proc Project, Nomi City, Ishikawa 9231292, JapanPanasonic Corp, Device Solut Ctr, Moriguchi, Osaka 5708501, Japan
Masuda, Takashi
Ohdaira, Keisuke
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Japan Adv Inst Sci & Technol, Nomi City, Ishikawa 9231292, JapanPanasonic Corp, Device Solut Ctr, Moriguchi, Osaka 5708501, Japan
Ohdaira, Keisuke
Shimoda, Tatsuya
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机构:
Japan Adv Inst Sci & Technol, Nomi City, Ishikawa 9231292, Japan
JST ERATO Shimoda Nanoliquid Proc Project, Nomi City, Ishikawa 9231292, JapanPanasonic Corp, Device Solut Ctr, Moriguchi, Osaka 5708501, Japan
机构:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Irikawa, Junpei
Miyajima, Shinsuke
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机构:
Univ Stuttgart, Inst Phys Elect, D-70569 Stuttgart, GermanyTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Miyajima, Shinsuke
Kida, Shuhei
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机构:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Kida, Shuhei
Watahiki, Tatsuro
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机构:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Watahiki, Tatsuro
Konagai, Makoto
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机构:
Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
Tokyo Inst Technol, Photovolta Res Ctr PVREC, Meguro Ku, Tokyo 1528552, JapanTokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
机构:
Fac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, AlgeriaFac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, Algeria
Khelifati, N.
Cherfi, R.
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h-index: 0
机构:
Fac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, AlgeriaFac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, Algeria
Cherfi, R.
Keffous, A.
论文数: 0引用数: 0
h-index: 0
机构:
Unit Dev Technol, Algiers, AlgeriaFac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, Algeria
Keffous, A.
Rahal, A.
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机构:
Fac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, AlgeriaFac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, Algeria
Rahal, A.
Kechouane, M.
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h-index: 0
机构:
Fac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, AlgeriaFac Phys USTHB, Phys Mat Lab, Equipe Couches Minces & Semicond, BP 32, Bab Ezzouar 16111, Alger, Algeria
Kechouane, M.
THIN FILMS AND POROUS MATERIALS,
2009,
609
: 81
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