Chemical Structure and Magnetism of FeOx/Fe2O3 Interface Studied by X-ray Absorption Spectroscopy

被引:12
作者
Mohamed, Ahmed Yousef [1 ,2 ,3 ]
Park, Won Goo [4 ]
Cho, Deok-Yong [1 ,2 ]
机构
[1] Jeonbuk Natl Univ, IPIT, Jeonju 54896, South Korea
[2] Jeonbuk Natl Univ, Dept Phys, Jeonju 54896, South Korea
[3] South Valley Univ, Dept Phys, Qena 83523, Egypt
[4] Seoul Natl Univ, Inst Basic Sci, Ctr Correlated Electron Syst, Seoul 08826, South Korea
基金
新加坡国家研究基金会;
关键词
FeOx; Fe2O3; X-ray absorption spectroscopy; X-ray magnetic circular dichroism; ferromagnet; antiferromagnet; ELECTRONIC-STRUCTURE; CIRCULAR-DICHROISM; FE-OXIDE; GAMMA-FE2O3; ORIGIN; FE3O4; FILMS; XMCD;
D O I
10.3390/magnetochemistry6030033
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The chemical and magnetic states of Fe/Fe2O3 thin films prepared by e-beam evaporation were investigated by using element-specific techniques, X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). It was clearly shown that the Fe layers are oxidized to form an antiferromagnetic (AFM) FeOx<1, while the bottom oxide remained a weak ferromagnet (wFM) (alpha+ gamma)-type Fe2O3. Dependences of the peak intensities and lineshapes on the Fe thickness and measurement geometry further demonstrate that FeOx<1 layers reside mostly at the interface realizing an FM (Fe)/AFM (FeOx)/wFM (Fe2O3), whilst the spin directions lie in the sample plane for all the samples. The self-stabilized intermediate oxide can act as a physical barrier for spins to be injected into the wFM oxide, implying a substantial influence on tailoring the spin tunneling efficiency for spintronics application.
引用
收藏
页码:1 / 10
页数:10
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