Study of layer-by-layer self-assembled viscoelastic films on thickness-shear mode resonator surfaces

被引:32
|
作者
Calvo, EJ [1 ]
Forzani, ES [1 ]
Otero, M [1 ]
机构
[1] Univ Buenos Aires, INQUIMAE, Dept Quim Inorgan Analit & Quim Fis, Fac Ciencias Exactas & Nat, AR-1428 Buenos Aires, DF, Argentina
关键词
D O I
10.1021/ac0157425
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
We describe quartz crystal electroacoustic admittance studies in thickness shear mode resonators loaded with self-assembled multilayers composed of alternate layers of glucose oxidase (GOx) and poly(allylamine) covalently attached to [Os(bpy)(2)ClPyCOH](-), (PAH-Os), deposited on a 3-mercaptopropanesulfonic acid (MPS)-modified gold on the quartz crystal. The complex acoustic impedance parameters, R-S and X-LS of a lumped-element Butterworth-Van Elyke (BVD) resonator have been determined for organized thin films of different thickness obtained by varying the number of enzyme layers, n, in (PAH-Os)n(GOx)(n) structures. The ellipsometric film thickness and mass for dry enzyme multilayer films and films in contact with water were evaluated, and the average film density was estimated. By combination of the estimated film thickness and density, the expression for the surface mechanical impedance of the lumped-element modified resonator (Granstaff and Martin model), and the liquid density and viscosity, we simulate the layer-by-layer film growth on the basis of the measured electroacoustic impedance. The complex impedance X-LS and R-S increase with film thickness and the enzyme films can be regarded as acoustically thin in the reduced state for films thinner than 600 nm. We have also measured electroacoustic parameters for PAH-Os/GOx self-assembled multilayers under electrochemical perturbation in a buffer electrolytic solution. The electrostatically self-assembled multilayers behaved as lossy viscoelastic films at 10 MHz with G'(f) and G"(f) on the order of 10(6) Pa. The films became viscoelastic upon oxidation to Os(III), resulting in an increase of RS and X-LS in the oxidized state with the number of (PAH-Os)(GOx) bilayers due to film swelling and an increase in the shear moduli during oxidation.
引用
收藏
页码:3281 / 3289
页数:9
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