Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

被引：0

作者：

Ding Siye ^{[1
]}

Yan Guanchao ^{[1
]}

Zhu Xiaodong ^{[1
]}

Zhou Haiyang ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Modern Phys, CAS Key Lab Basic Plasma Phys, Hefei 230026, Peoples R China

来源：

PLASMA SCIENCE & TECHNOLOGY | 2009年 / 11卷 / 02期

基金：

中国国家自然科学基金;

关键词：

silicon carbide; plasma assisted chemical vapour deposition; structure; CARBON; GROWTH;

D O I：

暂无

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Evolution of chemical bonding configurations for the films deposited from hexamethyldisiloxane (HMDSO) diluted with H-2 during plasma assisted chemical vapour deposition is investigated. In the experiment a small amount of CH4 was added to adjust the plasma environment and modify the structure of the deposited films. The measurements of Raman spectroscopy and X-ray diffraction (XRD) revealed the production of 6H-SiC embedded in the amorphous matrix without the input of CH4. As CH4 was introduced into the deposition reaction, the transition of 6H-SiC to cubic SiC in the films took place, and also the film surfaces changed from a structure of ellipsoids to cauliflower-like shapes. With a further increase of CH4 in the flow ratio, the obtained films varied from Si-C bonding dominant to a sp(2)/sp(3) carbon-rich composition.

引用

页码：159 / 162

页数：4

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