MOMBE growth of InGaAs using trisdimethylaminoarsenic

被引：2

作者：

Hidaka, K ^{[1
]}

Asahi, H ^{[1
]}

Yamamoto, K ^{[1
]}

Asami, K ^{[1
]}

Satoh, J ^{[1
]}

Gonda, S ^{[1
]}

机构：

[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 181卷 / 03期

关键词：

MOMBE; InGaAs; TDMAAs; morphology; PL;

D O I：

10.1016/S0022-0248(97)00287-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaAs layers were grown by metalorganic molecular beam epitaxy (MOMBE) using trimethylindium (TMIn), triethylgallium (TEGa) and unprecracked trisdimethylaminoarsenic (TDMAAs). Substrate temperature dependence of the growth rate and In composition of InGaAs for the fixed TMIn, TEGa and TDMAAs flow rates are similar to those for the use of TMIn, TEGa and thermally cracked arsine (AsH3). Mirror-like surface In0.53Ga0.47As layers lattice matched to InP are successfully grown, for the first time, using TDMAAs as an As precursor. Growth rate is 0.3 mu m/h and electron concentration is 3 x 10(16) cm(-3). 77 K photoluminescence spectrum has a band-to-band transition peak with a full width at half-maximum as narrow as 9.8 meV.

引用

页码：193 / 196

页数：4

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