Electronic properties of two-dimensional in-plane heterostructures of WS2/WSe2/MoS2

被引：24

作者：

Mu, Cong ^{[1
]}

Wei, Wei ^{[1
]}

Li, Jinjin ^{[1
]}

Huang, Baibiao ^{[1
]}

Dai, Ying ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Shandong, Peoples R China

来源：

MATERIALS RESEARCH EXPRESS | 2018年 / 5卷 / 04期

基金：

中国国家自然科学基金;

关键词：

TMDs; in-plane heterostructure; WS2/WSe2/MoS2; straintronics; TRANSITION-METAL DICHALCOGENIDES; HEXAGONAL BORON-NITRIDE; EPITAXIAL-GROWTH; LATERAL HETEROJUNCTIONS; GRAPHENE; MOS2; LAYER; EDGE;

D O I：

10.1088/2053-1591/aabddf

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-plane heterostructure of two-dimensional (2D) transition metal dichalcogenides (TMDs) means the formation of one-dimensional (1D) interfaces, and promises exciting properties. The electronic properties of in-plane heterostructure of WS2/WSe2/MoS2 are studied by means of the first-principles calculations based on density functional theory (DFT). We find that the band gap can be continuously tuned by changing the length of the components of the in-plane heterostructure, which can be explained by confinement effects. Lattice mismatch induced strain play a crucial role in determining the electronic properties, such as direct-indirect band gap transition, band alignment and the band offset of band edge. Our results suggest that the rich and tunable electronic properties endow in-plane heterostructure of WS2/WSe2/MoS2 great potential in applications in such as light emitting and photovoltaics.

引用

页数：7

共 56 条

[1] Enhanced Light-Matter Interaction in Graphene/h-BN van der Waals Heterostructures [J].

Aggoune, Wahib ;

Cocchi, Caterina ;

Nabok, Dmitrii ;

Rezouali, Karim ;

Belkhir, Mohamed Akli ;

Draxl, Claudia .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2017, 8 (07) :1464-1471

[2] Graphene, related two-dimensional crystals, and hybrid systems for energy conversion and storage [J].

Bonaccorso, Francesco ;

Colombo, Luigi ;

Yu, Guihua ;

Stoller, Meryl ;

Tozzini, Valentina ;

Ferrari, Andrea C. ;

Ruoff, Rodney S. ;

Pellegrini, Vittorio .

SCIENCE, 2015, 347 (6217)

[3] Chemical synthesis of two-dimensional atomic crystals, heterostructures and superlattices [J].

Chen, Peng ;

Zhang, Zhengwei ;

Duan, Xidong ;

Duan, Xiangfeng .

CHEMICAL SOCIETY REVIEWS, 2018, 47 (09) :3129-3151

[4] Synthesis of In-Plane Artificial Lattices of Monolayer Multijunctions [J].

Chiu, Kuan-Chang ;

Huang, Kuan-Hua ;

Chen, Chun-An ;

Lai, Ying-Yu ;

Zhang, Xin-Quan ;

Lin, Erh-Chen ;

Chuang, Meng-Hsi ;

Wu, Jenn-Ming ;

Lee, Yi-Hsien .

ADVANCED MATERIALS, 2018, 30 (07)

[5]

Ci L, 2010, NAT MATER, V9, P430, DOI [10.1038/nmat2711, 10.1038/NMAT2711]

[6]

Duan XD, 2014, NAT NANOTECHNOL, V9, P1024, DOI [10.1038/nnano.2014.222, 10.1038/NNANO.2014.222]

[7] Photovoltaic Heterojunctions of Fullerenes with MoS2 and WS2 Monolayers [J].

Gan, Li-Yong ;

Zhang, Qingyun ;

Cheng, Yingchun ;

Schwingenschloegl, Udo .

JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 2014, 5 (08) :1445-1449

[8] Toward Single-Layer Uniform Hexagonal Boron Nitride-Graphene Patchworks with Zigzag Linking Edges [J].

Gao, Yabo ;

Zhang, Yanfeng ;

Chen, Pengcheng ;

Li, Yuanchang ;

Liu, Mengxi ;

Gao, Teng ;

Ma, Donglin ;

Chen, Yubin ;

Cheng, Zhihai ;

Qju, Xiaohui ;

Duan, Wenhui ;

Liu, Zhongfan .

NANO LETTERS, 2013, 13 (07) :3439-3443

[9] Van der Waals heterostructures [J].

Geim, A. K. ;

Grigorieva, I. V. .

NATURE, 2013, 499 (7459) :419-425

[10] Effect of compression on the electronic, optical and transport properties of MoS2/graphene-based junctions [J].

Ghorbani-Asl, Mahdi ;

Bristowe, Paul D. ;

Koziol, K. ;

Heine, Thomas ;

Kuc, Agnieszka .

2D MATERIALS, 2016, 3 (02)

← 1 2 3 4 5 6 →