Transparent Conductive Oxide GZO Thin Films by Sol-gel Process

被引：0

作者：

Wang, Cheng-Chuan ^{[1
]}

Yen, Chia-Ying ^{[1
]}

机构：

[1] ITRI, Mat & Chem Res Labs MCL, Hsinchu 31040, Taiwan

来源：

APPLIED SCIENCE AND PRECISION ENGINEERING INNOVATION, PTS 1 AND 2 | 2014年 / 479-480卷

关键词：

Ga-doped zinc oxide (GZO); Sol-gel; Conductivity; transmittance; DOPED ZNO; OPTICAL-PROPERTIES; SPRAY-PYROLYSIS; ZINC; RESISTIVITY; ORIENTATION; DEPOSITION; GALLIUM; LAYER; AL;

D O I：

10.4028/www.scientific.net/AMM.479-480.40

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

In this work, GZO thin films were prepared by sol-gel process and spin coating technique. The XRD results showed the preferential c-axis orientation of the crystallites and the presence of the wurite phase of ZnO and it were suggested that the presence of Ga might be changed the d-spacing of ZnO to formation the Ga-doped zinc oxide. The effects of Ga amount on the conductivity and transparency were studied. The electrical resistivity for the GZO film doped 2 at% of Ga could be lowered to be 7.5x10(-3)Omega-cm with the calcination temperature was 550 degrees C and hydrogen treatment was conducted in the Ar/H-2 (97/3) atmosphere at 500 degrees C. In addition, the optical transmittances of GZO thin films were higher than 90% in visible wavelength region.

引用

页码：40 / 44

页数：5

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