Strong Carbon-Surface Dative Bond Formation by tert-Butyl Isocyanide on the Ge(100)-2 x 1 Surface

被引:12
作者
Shong, Bonggeun [1 ]
Wong, Keith T. [1 ]
Bent, Stacey F. [1 ]
机构
[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTOR SURFACES; ELECTRONIC-STRUCTURE; SI(100) SURFACE; PASSIVATION; FUNCTIONALIZATION; ISOTHIOCYANATE; SPECTROSCOPY; REACTIVITY; MOLECULES; MECHANISM;
D O I
10.1021/ja500742a
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Carbon dative bond formation between an organic molecule and a semiconductor surface is reported here for the first time. Our studies show that the adsorption of tert-butyl isocyanide on the (100) surface of germanium, measured using Fourier transform infrared spectroscopy, temperature-programmed desorption, and density functional theory calculations, occurs via formation of a dative bond to the surface through the isocyanide carbon. The experimentally observed adsorption energy of 26.8 kcal/mol is the largest among any organic molecule dative bonded on the Ge(100)-2 X 1 surface studied to date. The dative-bonded adsorbate is characterized by a N C stretching frequency significantly blue-shifted from that of the free molecule. Moreover, the adsorbate N C vibrational frequency red-shifts back toward that of the free molecule upon increasing coverage. These spectroscopic effects are attributed to sigma-donation of the isocyanide lone pair electrons to the surface.
引用
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页码:5848 / 5851
页数:4
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