Implications of the Logical Decode on the Radiation Response of a Multi-Level Cell NAND Flash Memory

被引：5

作者：

Ingalls, J. David ^{[1
]}

Gadlage, Matthew J. ^{[1
]}

Duncan, Adam R. ^{[1
]}

Kay, Matthew J. ^{[1
]}

Cole, Patrick L. ^{[1
]}

Hunt, Ken K. ^{[2
]}

机构：

[1] NSWC Crane, Crane, IN 47522 USA

[2] Air Force Res Lab, Albuquerque, NM 87117 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期

关键词：

Flash memory; floating gate; heavy ion; multi-level cell (MLC); single-level cell (SLC); total ionizing dose; x-ray; INDUCED LEAKAGE CURRENT; GATE;

D O I：

10.1109/TNS.2013.2282699

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The radiation response of a multi-level cell (MLC) NAND flash is used to determine the organization of logical states as they correspond to floating gate charge levels of constituent bit cell transistors. This "logical decode" is then used to demonstrate how an MLC device can be used to emulate a single-level cell (SLC) flash with total dose radiation sensitivity equivalent to and even surpassing that of a comparable actual SLC device. In addition, it is shown that the logical decode must be taken into account when performing radiation testing on MLC flash devices so as to gather accurate worst case response data.

引用

页码：4451 / 4456

页数：6

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