Improved growth of AgGaSe2 crystals and phase matched second harmonic generation of 10.6 μm CO2 laser radiation

被引:8
作者
Zhao, BJ [1 ]
Zhu, SF
Li, YD
Yu, FL
Li, QF
Li, ZH
Zhu, XH
Shao, SY
Lin, J
机构
[1] Sichuan Univ, Dept Mat Sci, Chengdu 610064, Peoples R China
[2] Sichuan Univ, Dept Photoelect Sci & Technique, Chengdu 610064, Peoples R China
关键词
AgGaSe2; crystal; descending ampoule with rotation; nonlinear optics; second harmonic generation; energy conversion efficiency; surface damage threshold;
D O I
10.1117/1.602322
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Good quality AgGaSe2 single crystal 22 mm in diameter and 80 mm in length is grown by an improved technique, i.e., descending ampoule with rotation. Although the crystals grow with optical defects, postgrowth heat treatment procedures are used to successfully eliminate the defects and produce material of 62.4% IR transmission at 10.6 mu m. The frequency-doubling device is cut from a cylindrical crystal boule using a new orientation cut method according to the type-1 phase-matched condition. A high optical quality, orientated AgGaSe2 single crystal of 10 x 10 x 12 mm size is used for second harmonic generation (SHG) of the pulsed output of a 10.6 mu m CO2 miniature transversely excited atmospheric laser. A relatively high energy conversion efficiency of 12% is obtained. It is found that the optical surface damage threshold of the crystal is larger than 12 MW/cm(2). (C) 1999 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(99)00512-7].
引用
收藏
页码:2129 / 2133
页数:5
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