Optimizing of Gold Nanoparticles on Porous Silicon Morphologies for a Sensitive Carbon Monoxide Gas Sensor Device

被引:33
作者
Dheyab, Amer B. [1 ]
Alwan, Alwan M. [2 ]
Zayer, Mehdi Q. [2 ]
机构
[1] Minist Sci & Technol, Baghdad, Iraq
[2] Univ Technol Baghdad, Sch Appl Sci, Baghdad, Iraq
关键词
PSi; SEM; Response; Recovery; AuNP hetro structures; Gas sensing;
D O I
10.1007/s11468-018-0828-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A set of carbon monoxide (CO) gas sensors based on porous silicon (PSi)/gold nanoparticle (AuNP) hetro structures were fabricated. Different forms of PSi surface morphologies were studied as a substrate for growth of AuNPs. Simple dipping process of PSi in hydrogen tetrachloroaurate (III) solution (HAuCl4) at fixed concentrations of 10(-2)M/3.5HF was used to synthesize AuNPs. The n-type PSi was equipped through photo-electrochemical etching process at current density value of 10mA/cm(2) under illumination condition of 530-nm wavelength and laser illumination intensity of 20 to 80mW/cm(2). Three different forms of PSi morphology, meso, macro, and double layers with pore shapes and sizes, were prepared. The structural and surface morphology properties of PSi-based substrate before and after deposition of AuNPs were investigated through studying of scanning electron microscopy (SEM), photoluminescence (PL), and X-ray diffraction (XRD). The electrical property (J-V) was carried out in primary vacuum and CO at low pressure. The results show that PSi surface morphologies strongly influenced the AuNP sizes and hence the sensor performance. It was found that decrease the AuNP sizes could be occasioned in high and fast current response.
引用
收藏
页码:501 / 509
页数:9
相关论文
共 12 条
[1]  
Alwan AM, 2017, J ENG TECHNOLOGY U A
[2]  
Alwan AM, 2017, APPL NANOSCI, P7
[3]  
Alwan AM, 2017, IJESRT, V6
[4]  
Alwan AM, 2018, SILICON
[5]  
Alwan M., 2018, IRAQI J SCI, V59, P57, DOI DOI 10.24996/IJS.2018.59.1A.8
[6]  
Azraf M, 2013, THESIS
[7]   Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].
Bisi, O ;
Ossicini, S ;
Pavesi, L .
SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126
[8]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[9]  
Gole J, 2009, METAL COATING POROUS
[10]  
Jawad MJ, 2015, J ELECT ENG, V16, P502