Features of Fermi-level pinning at the interface of Al0.3Ga0.7As with anodic oxide and stabilized zirconia

被引：5

作者：

Tikhov, S. V. ^{[1
]}

Gorshkov, O. N. ^{[1
]}

Antonov, I. N. ^{[1
]}

Kasatkin, A. P. ^{[1
]}

Koryazhkina, M. N. ^{[1
]}

机构：

[1] Nizhnii Novgorod State Univ, Physicotech Inst, Nizhnii Novgorod 603950, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2013年 / 39卷 / 12期

关键词：

GaAs; Fermi Level; Technical Physic Letter; Anodic Oxide; Sweep Speed;

D O I：

10.1134/S1063785013120134

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the metal-oxide-semiconductor structures based on the Al0.3Ga0.7As films prepared by metal-organic epitaxy, Fermi-level pinning at the Al0.3Ga0.7As/oxide interface at a distance of 1.1 eV from the top of the Al0.3Ga0.7As conduction band was observed. In these structures, a long-term memory phenomenon was found that was caused by the inflow of electrons from Al0.3Ga0.7As to the anodic oxide and their capture by deep traps. The reversible change in the states of the structures due to this memory effect under the action of an electric field or light was observed.

引用

页码：1064 / 1067

页数：4

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