Facile synthesis of fiat crystal ZnO thin films by solution growth method: A micro-structural investigation

被引:101
作者
Thool, Gautam Sheel [1 ]
Singh, Ajaya Kumar [1 ]
Singh, R. S. [2 ]
Gupta, Ashish [3 ]
Susan, Md Abu Bin Hasan [4 ]
机构
[1] Govt VYT PG Autonomous Coll, Dept Chem, Chhattisgarh, India
[2] Govt DT Coll, Dept Phys, Durg, Chhattisgarh, India
[3] IIT, Samtel Ctr Display Technol, Kanpur, Uttar Pradesh, India
[4] Univ Dhaka, Dept Chem, Dhaka 1000, Bangladesh
关键词
Flat structured ZnO; Micro-structure analysis; Williamson-Hall analysis; Crystallographic imperfections; CHEMICAL BATH DEPOSITION; SOL-GEL; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; WILLIAMSON-HALL; TEMPERATURE; NANORODS; STRAIN; PHOTOLUMINESCENCE; NANOSTRUCTURES;
D O I
10.1016/j.jscs.2014.02.005
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flat crystal ZnO thin films were prepared by chemical bath deposition technique onto glass substrates. XRD patterns of the films deposited at about 80 degrees C and annealed at 200 degrees C for 1 h in oxygen environment revealed the existence of polycrystalline hexagonal wurtzite phase with c-axis orientation of crystallites in the films. The crystallite size and lattice strain from X-ray line broadening profile were evaluated using the Scherrer method and Williamson Hall method. Structural parameters such as dislocation density, stacking faults probability, lattice constants, lattice stress, unit cell volume, internal parameter, texture and number of crystallites per unit area have also been calculated. Surface morphology of the films was analyzed by scanning electron microscopy and atomic force microscopy. Photoluminescence spectrum at room temperature exhibited two luminescence centers, one is for UV emission (near band edge emission) located at 3.18 eV and another is for deep level emission located at 2.56 eV. (C) 2014 King Saud University. Production and hosting by Elsevier B.V. All rights reserved.
引用
收藏
页码:712 / 721
页数:10
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