A fast Monte-Carlo Solver for Phonon Transport in Nanostructured Semiconductors

被引：0

作者：

Huang, Mei-Jiau ^{[1
]}

Tsai, Tung-Chun ^{[1
]}

Liu, Liang-Chun ^{[1
]}

Jeng, Ming-shan ^{[2
]}

Yang, Chang-Chung ^{[2
]}

机构：

[1] Natl Taiwan Univ, Dept Mech Engn, Taipei 10764, Taiwan

[2] Ind Technol Res Inst, Energy & Environm Labs, Hsinchu, Taiwan

来源：

CMES-COMPUTER MODELING IN ENGINEERING & SCIENCES | 2009年 / 42卷 / 02期

关键词：

Monte-Carlo simulator; phonon transport; gray medium approximation; nanostructures; LATTICE THERMAL-CONDUCTIVITY; SI/GE SUPERLATTICES; HEAT-CONDUCTION; SIMULATION; MODEL;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We develop a Monte-Carlo simulator for phonon transport in nanostructured semiconductors, which solves the phonon Boltzmann transport equation under the gray medium approximation. Proper physical models for the phonon transmission/reflection at an interface between two different materials and proper numerical boundary conditions are designed and implemented carefully. Most of all, we take advantage of geometric symmetry that exists in a system to reduce the computational amount. The validity and accuracy of the proposed MC solver was successfully verified via a I D transient conduction problem and the cross-plane (1D) and in-plane (2D) phonon transport problems associated with Si/Ge superlatice thin films.

引用

页码：107 / 129

页数：23

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