DC and AC models of partially-depleted SOI MOSFETs in weak inversion

被引：0

作者：

Tomaszewski, D ^{[1
]}

Domanski, K ^{[1
]}

Lukasiak, L ^{[1
]}

Zareba, A ^{[1
]}

Gibki, J ^{[1
]}

Jakubowski, A ^{[1
]}

机构：

[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland

来源：

PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：289 / 298

页数：10

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