DC and AC models of partially-depleted SOI MOSFETs in weak inversion

被引：0
作者：
Tomaszewski, D [1 ]
Domanski, K [1 ]
Lukasiak, L [1 ]
Zareba, A [1 ]
Gibki, J [1 ]
Jakubowski, A [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：289 / 298
页数：10
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