DC and AC models of partially-depleted SOI MOSFETs in weak inversion

被引：0
作者：
Tomaszewski, D [1 ]
Domanski, K [1 ]
Lukasiak, L [1 ]
Zareba, A [1 ]
Gibki, J [1 ]
Jakubowski, A [1 ]
机构：
[1] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
PROGRESS IN SOI STRUCTURES AND DEVICES OPERATING AT EXTREME CONDITIONS | 2002年 / 58卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：289 / 298
页数：10
相关论文
共 50 条
[21]   Charge pumping effects in partially depleted SOI MOSFETs [J].
Okhonin, S ;
Nagoga, M ;
Fazan, P .
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2003, :74-75
[22]   Tunneling source-body contact for partially-depleted SOI MOSFET [J].
Univ of California, Los Angeles, United States .
IEEE Trans Electron Devices, 7 (1143-1147)
[23]   Evidence for Enhanced Reliability in a Novel Nanoscale Partially-Depleted SOI MOSFET [J].
Anvarifard, Mohammad Kazem ;
Orouji, Ali Asghar .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2015, 15 (04) :536-542
[24]   Bounding the severity of hysteretic transient effects in partially-depleted SOI CMOS [J].
Wei, A ;
Antoniadis, DA .
1996 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, :74-75
[25]   Noise contribution of the body resistance in partially-depleted SOI MOSFET's [J].
Faccio, F ;
Anghinolfi, F ;
Heijne, EHM ;
Jarron, P ;
Cristoloveanu, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) :1033-1038
[26]   Compact SOI model for fully-depleted and partially-depleted 0.25 um SIMOX devices [J].
BTA Technology, Inc, Santa Clara, United States .
IEEE Int Conf Microelectron Test Struct, (222-226)
[27]   A DC MODEL FOR FULLY-DEPLETED SOI MOSFETS [J].
KASEMSUWAN, V ;
ELNOKALI, M .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1995, 79 (03) :281-292
[28]   SOI partially-depleted ultra low voltage memory and digital circuit design [J].
Thomas, O ;
Amara, A ;
Valentian, A .
2005 International Conference on Integrated Circuit Design and Technology, 2005, :211-215
[29]   Total-Ionizing-Dose Radiation Response of Partially-Depleted SOI devices [J].
Rezzak, Nadia ;
Zhang, En Xia ;
Alles, Michael L. ;
Schrimpf, Ronald D. ;
Hughes, Harold .
2010 IEEE INTERNATIONAL SOI CONFERENCE, 2010,
[30]   Emerging floating-body effects in advanced partially-depleted SOI devices [J].
Poiroux, T ;
Faynot, O ;
Tabone, C ;
Tigelaar, H ;
Mogul, H ;
Bresson, N ;
Cristoloveanu, S .
2002 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS, 2002, :99-100
12345