Joint Power Management and Adaptive Modulation and Coding for Wireless Communications Systems With Unreliable Buffering Memories

被引:3
作者
Khairy, Muhammad S. [1 ]
Khajeh, Amin [2 ]
Eltawil, Ahmed M. [1 ]
Kurdahi, Fadi J. [1 ]
机构
[1] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
[2] Intel Labs, Hillsboro, OR 97006 USA
基金
美国国家科学基金会;
关键词
Adaptive modulation and coding; dynamic power management; embedded memories; energy efficient systems; low power; voltage over scaling;
D O I
10.1109/TCSI.2014.2309791
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
To guard against process variability in advanced semiconductor nodes, especially for high-density memories, designers resort to overdesigning policies resulting in increased power consumption. A promising approach to save power is to utilize Voltage over-Scaling (VoS). However VoS results into unreliable buffering memories where a predictable statistically amount of errors are introduced to memories. The goal is to trade off channel dependent SNR slack versus hardware induced errors, to achieve predetermined quality metrics, at reduced power consumption. By design, modern communication systems attempt to minimize channel-dependent SNR slack via adaptive modulation and coding (AMC) schemes, thus reducing the gains of on-chip power management. This paper investigates the interaction between on-chip power management via VoS on embedded memories versus network based AMC techniques. A novel mathematical approach that analytically describes the system packet error rate (PER) performance under the VoS induced noise is presented. Based on this model, different AMC and power management algorithms are presented that utilize the received SNR estimates to find the best AMC mode and memory voltage that achieves performance goals at reduced power consumption. Simulation results show that the proposed algorithms can achieve up to 58% energy efficiency for the memory-subsystems compared to conventional AMC algorithm with perfect memories.
引用
收藏
页码:2456 / 2465
页数:10
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