Effect of In-Ga intermixing on the electronic states in self-assembled InAs quantum dots probed by nanogap electrodes

被引：24

作者：

Shibata, K. ^{[1
]}

Jung, M.

Cha, K. M.

Sotome, M.

Hirakawa, K.

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

基金：

日本学术振兴会;

关键词：

electrochemical electrodes; gallium arsenide; III-V semiconductors; indium compounds; self-assembly; semiconductor quantum dots; tunnelling; wave functions;

D O I：

10.1063/1.3123816

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the effect of In-Ga intermixing on the electronic states in single self-assembled InAs quantum dots (QDs) coupled to nanogap metallic electrodes. The orbital quantization energies of the QDs and the tunnel resistances exhibited a strong dependence on growth temperature, T(G), due to In-Ga intermixing during QD formation. When the intermixing was suppressed by reducing T(G) to 470 degrees C, the electron wave functions in the QDs become more extended in space and QD-electrode coupling sufficiently strong to form the Kondo singlet states at 4.3 K was realized even in a small QD of similar to 45 nm diameter.

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页数：3

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