Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

被引：41

作者：

Kageyama, T

Miyamoto, T

Makino, S

Koyama, F

Iga, K

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Res Ctr Quantum Effect Elect, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

基金：

日本学术振兴会;

关键词：

GaNAs; GaInNAs; CBE; RF radical cell; quantum well; ion reduction;

D O I：

10.1016/S0022-0248(99)00569-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Optical quality of GaNAs and GaInNAs quantum wells and its dependence on RF radical cell operation in chemical beam epitaxy (CBE) were investigated. It was shown that nitrogen atoms are main plasma species responsible for the CBE growth of GaNAs and related alloy. By choosing aperture flow conductance, significant improvement in photoluminescence of GaInNAs/GaAs quantum well at 1.2 mu m wavelength region have been demonstrated. The reduction of ions are found to be effective to improve crystal quality. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：350 / 354

页数：5

共 18 条

[1] Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
Miyamoto, T
Takeuchi, K
Kageyama, T
Koyama, F
Iga, K
JOURNAL OF CRYSTAL GROWTH, 1999, 197 (1-2) : 67 - 72
[2] Chemical beam epitaxy growth and characterization of GaNAs/GaAs
Takeuchi, K
Miyamoto, T
Kageyama, T
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (3B): : 1603 - 1607
[3] Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy
Sun, Yijun
Cheng, Zhiyuan
Sheng, Kuang
Zhou, Qiang
Sun, Ying
Chen, Peng
Zhuo, Ningze
Wang, Haibo
Yu, Xudong
Heuken, Michael
Egawa, Takashi
JOURNAL OF CRYSTAL GROWTH, 2018, 500 : 11 - 14
[4] GaInNAs/GaAs quantum well growth by chemical beam epitaxy
Miyamoto, T
Takeuchi, K
Kageyama, T
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (01): : 90 - 91
[5] 1.4 μm GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy
Ikenaga, Y
Miyamoto, T
Makino, S
Kageyama, T
Arai, M
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2A): : 664 - 665
[6] Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence
Kageyama, T
Miyamoto, T
Makino, S
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3B): : L298 - L300
[7] Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs
Kawaguchi, M
Miyamoto, T
Gouardes, E
Schlenker, D
Kondo, T
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (12A): : L1219 - L1220
[8] Composition dependence of thermal annealing effect on 1.3 μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy
Makino, S
Miyamoto, T
Kageyama, T
Ikenaga, Y
Arai, M
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (11B): : L1211 - L1213
[9] Nitrogen composition and growth temperature dependence of growth characteristics for self-assembled GaInNAs/GaAs quantum dots by chemical beam epitaxy
Makino, S
Miyamoto, T
Kageyama, T
Ikenaga, Y
Koyama, F
Iga, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (2B): : 953 - 957
[10] Overlapping effects of the optical transitions of GaNAs thin films grown by molecular beam epitaxy
Cortes-Mestizo, I. E.
Espinosa-Vega, L., I
Espinoza-Figueroa, J. A.
Yee-Rendon, C. M.
Zamora-Peredo, L.
Rodriguez, A. G.
Mercado-Ornelas, C. A.
Perea-Parrales, F. E.
Mendez-Garcia, V. H.
THIN SOLID FILMS, 2020, 702

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