Effect of an in-plane magnetic field on magnetoresistance hysteresis of the two-dimensional electron gas in the integer quantum Hall effect regime

被引：3
作者：
Budantsev, M. V. [1 ]
Pogosov, A. G. [1 ]
Bakarov, A. K. [1 ]
Toropov, A. I. [1 ]
Portal, J. C. [2 ,3 ,4 ]
机构：
[1] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] CNRS, GHMFL, F-38042 Grenoble 9, France
[3] INSA Toulouse, F-31077 Toulouse 4, France
[4] Inst Univ France, Toulouse, France
来源：
JETP LETTERS | 2009年 / 89卷 / 02期
基金：
俄罗斯基础研究基金会;
关键词：
CURRENTS; LIMIT;
D O I：
10.1134/S0021364009020106
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Effect of an in-plane magnetic field on the features of the magnetoresistance of a narrow conducting channel placed in the bath of a macroscopic two-dimensional electron gas has been studied. These features are manifested in the hysteretic behavior of the magnetoresistance in the quantum Hall effect regime. It has been found that the hysteresis loops observed in different ranges of the filling factor may be separated into two groups that differ in both the response to the in-plane magnetic field and the temperature dependence. The basic features observed near the integer filling factors nu = 1 and 2 are almost independent of the in-plane magnetic field. Therefore, their origin is not associated with spin effects. At the same time, additional features that appear at nu a parts per thousand 1.8 and 2.2 are suppressed by the in-plane magnetic field B (aEuro-) a parts per thousand 6 T and almost temperature-independent from 45 mK to 1 K.
引用
收藏
页码：92 / 95
页数：4
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