Raman and AFM studies of (As2S3)0.45(SbSI)0.55 thin films and bulk glass

被引:4
|
作者
Azhniuk, Yu. M. [1 ]
Villabona, A. [2 ]
Gomonnai, A. V. [1 ]
Rubish, V. M. [3 ]
Marjan, V. M. [3 ]
Gomonnai, O. O. [4 ]
Zahn, D. R. T. [2 ]
机构
[1] Ukr Nat Acad Sci, Inst Electron Phys, UA-88017 Uzhgorod, Ukraine
[2] Tech Univ Chemnitz, D-09107 Chemnitz, Germany
[3] Ukr Nat Acad Sci, Inst Informat Recording, Uzhhorod Sci & Technol Ctr, UA-88017 Uzhgorod, Ukraine
[4] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine
关键词
Chalcogenide film; Raman scattering; Atomic force microscopy; Laser irradiation; Crystallization; GES2-SBSI GLASSES; SBSI; AS2S3; SPECTROSCOPY; SCATTERING; FABRICATION; LIGHT;
D O I
10.1016/j.jnoncrysol.2014.04.015
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(As2S3)(0.45)(SbSI)(0.55) thin films were studied by Raman spectroscopy and atomic force microscopy. Laser-induced crystallization of SbSI crystallites from the amorphous (As2S3)(0.45)(SbSI)(0.55) thin films was observed in micro-Raman measurements as a result of local laser beam heating. The dependence of the observed effect on the laser power and the film pre-heating duration is discussed. No such effects were observed for bulk glasses with a similar composition. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:36 / 40
页数:5
相关论文
共 50 条
  • [21] On the origin of the Boson peak in the Raman scattering spectrum of As2S3 glass
    Tikhomirov, VK
    Santos, LF
    Almeida, RM
    Jha, A
    Kobelke, J
    Sheffler, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 284 (1-3) : 198 - 202
  • [22] Photoexpansion in As2S3 glass
    Tanaka, K
    PHYSICAL REVIEW B, 1998, 57 (09) : 5163 - 5167
  • [23] Surface-enhanced Raman scattering of As2S3 and Se thin films formed on Au nanostructures
    Yukhymchuk, V. O.
    Rubish, V. M.
    Dzhagan, V. M.
    Hreshchuk, O. M.
    Isaieva, O. F.
    Mazur, N. V.
    Durkot, M. O.
    Kryuchyn, A. A.
    Kyrylenko, V. K.
    Novichenko, V. M.
    Kremenytskyi, V. V.
    Maksimenko, Z. V.
    Valakh, M. Ya.
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2023, 26 (01) : 49 - 58
  • [24] STRUCTURE OF AS2S3 GLASS
    NANDI, AK
    MUKHERJEE, B
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1983, 21 (08) : 476 - 478
  • [25] Fs Laser Patterning of Amorphous As2S3 Thin Films
    Mihai, Claudia
    Jipa, Florin
    Socol, Gabriel
    Kiss, Adrian E.
    Zamfirescu, Marian
    Velea, Alin
    MATERIALS, 2024, 17 (04)
  • [26] DISSOLUTION OF THIN-FILMS OF AS2S3 IN THE PRESENCE OF SURFACTANTS
    PETKOV, K
    SACHATCHIEVA, M
    MALINOWSKI, N
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 85 (03) : 309 - 314
  • [27] NEW METHOD FOR THE DEPOSITION OF AS2S3 THIN-FILMS
    DESHMUKH, LP
    DARGAD, JS
    ROTTI, CB
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1995, 33 (11) : 687 - 692
  • [28] Preparation and characterization of chemically deposited As2S3 thin films
    Mane, RS
    Lokhande, BJ
    Uplane, MD
    Lokhande, CD
    INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1999, 37 (03) : 196 - 198
  • [29] Photosensitivity of As2S3 chalcogenide thin films at 1.5 μm
    Hô, N
    Laniel, JM
    Vallée, R
    Villeneuve, A
    OPTICS LETTERS, 2003, 28 (12) : 965 - 967
  • [30] As2S3 thin films deposited by atomic layer deposition
    Farm, Elina
    Heikkila, Mikko J.
    Vehkamaki, Marko
    Mizohata, Kenichiro
    Ritala, Mikko
    Leskela, Markku
    Kemell, Marianna
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (01):