Raman and AFM studies of (As2S3)0.45(SbSI)0.55 thin films and bulk glass

被引:4
|
作者
Azhniuk, Yu. M. [1 ]
Villabona, A. [2 ]
Gomonnai, A. V. [1 ]
Rubish, V. M. [3 ]
Marjan, V. M. [3 ]
Gomonnai, O. O. [4 ]
Zahn, D. R. T. [2 ]
机构
[1] Ukr Nat Acad Sci, Inst Electron Phys, UA-88017 Uzhgorod, Ukraine
[2] Tech Univ Chemnitz, D-09107 Chemnitz, Germany
[3] Ukr Nat Acad Sci, Inst Informat Recording, Uzhhorod Sci & Technol Ctr, UA-88017 Uzhgorod, Ukraine
[4] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine
关键词
Chalcogenide film; Raman scattering; Atomic force microscopy; Laser irradiation; Crystallization; GES2-SBSI GLASSES; SBSI; AS2S3; SPECTROSCOPY; SCATTERING; FABRICATION; LIGHT;
D O I
10.1016/j.jnoncrysol.2014.04.015
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(As2S3)(0.45)(SbSI)(0.55) thin films were studied by Raman spectroscopy and atomic force microscopy. Laser-induced crystallization of SbSI crystallites from the amorphous (As2S3)(0.45)(SbSI)(0.55) thin films was observed in micro-Raman measurements as a result of local laser beam heating. The dependence of the observed effect on the laser power and the film pre-heating duration is discussed. No such effects were observed for bulk glasses with a similar composition. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:36 / 40
页数:5
相关论文
共 50 条
  • [1] Characterization of As2S3 thin surface films using sem and afm methods
    EnǍchescu, M. (marius.enachescu@upb.ro), 1600, Politechnica University of Bucharest (76):
  • [2] CHARACTERIZATION OF As2S3 THIN SURFACE FILMS USING SEM AND AFM METHODS
    Moldovan, A.
    Enachescu, M.
    Popescu, A. A.
    Mihailescu, M.
    Negutu, C.
    Baschir, L.
    Vasile, G. C.
    Savastru, D.
    Iovu, M. S.
    Verlan, V. I.
    Bordian, O. T.
    Vasile, I. M.
    Puscas, N. N.
    UNIVERSITY POLITEHNICA OF BUCHAREST SCIENTIFIC BULLETIN-SERIES A-APPLIED MATHEMATICS AND PHYSICS, 2014, 76 (02): : 215 - 222
  • [3] RESONANT RAMAN-SCATTERING IN AS2S3 AMORPHOUS THIN-FILMS
    RAZZETTI, C
    LOTTICI, PP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 87 (02): : 479 - 483
  • [4] Photodarkening in amorphous As2S3 thin films
    Liu, QM
    Gan, FX
    CHINESE PHYSICS LETTERS, 2002, 19 (01): : 124 - 126
  • [5] Surface degradation of As2S3 thin films
    Allen, P. J.
    Johnson, B. R.
    Baran, R. T.
    Anheier, N. C.
    Sundaram, S. K.
    Engelhard, M. H.
    Broocks, B. T.
    PHYSICS AND CHEMISTRY OF GLASSES-EUROPEAN JOURNAL OF GLASS SCIENCE AND TECHNOLOGY PART B, 2006, 47 (06): : 681 - 687
  • [6] Relaxation processes in As2S3 thin films
    Savchenko, ND
    Shchurova, TN
    Baran, NY
    Spesivykh, AA
    VACUUM, 2005, 80 (1-3) : 128 - 131
  • [7] THE STRUCTURE OF AS2S3 THIN-FILMS
    CIMPL, Z
    KOSEK, F
    LUKES, F
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 439 - 441
  • [8] Intrinsic nanoscale phase separation of bulk As2S3 glass
    Georgiev, DG
    Boolchand, P
    Jackson, KA
    PHILOSOPHICAL MAGAZINE, 2003, 83 (25) : 2941 - 2953
  • [9] Second-order nonlinear susceptibility in As2S3 chalcogenide thin glass films
    Quiquempois, Y
    Villeneuve, A
    Dam, D
    Turcotte, K
    Maier, J
    Stegeman, G
    Lacroix, S
    ELECTRONICS LETTERS, 2000, 36 (08) : 733 - 734
  • [10] Tunable Raman lasing in an As2S3 chalcogenide glass microsphere
    Andrianov, Alexey, V
    Anashkina, Elena A.
    OPTICS EXPRESS, 2021, 29 (04): : 5580 - 5587