Impact of misfit relaxation and a-domain formation on the electrical properties of tetragonal PbZr0.4Ti0.6O3/PbZr0.2Ti0.8O3 thin film heterostructures: Experiment and theoretical approach

被引：13

作者：

Feigl, Ludwig ^{[1
]}

Misirlioglu, I. B. ^{[1
]}

Vrejoiu, Ionela ^{[1
]}

Alexe, Marin ^{[1
]}

Hesse, Dietrich ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 06期

关键词：

crystal microstructure; dielectric polarisation; dislocations; electric domains; ferroelectric materials; ferroelectric thin films; lead compounds; permittivity; pulsed laser deposition; strontium compounds; transmission electron microscopy; zirconium compounds; FERROELECTRIC-FILMS; PYROELECTRIC PROPERTIES; STRAIN RELAXATION; DEAD LAYER; DISLOCATIONS; CAPACITORS; SURFACE; ORIGIN; SCALE;

D O I：

10.1063/1.3056164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heterostructures consisting of PbZr0.2Ti0.8O3 and PbZr0.4Ti0.6O3 epitaxial films on a SrTiO3 (100) substrate with a SrRuO3 bottom electrode were prepared by pulsed laser deposition. By using the additional interface provided by the ferroelectric bilayer structure and changing the sequence of the layers, the content of dislocations and elastic domain types was varied in a controlled manner. The resulting microstructure was investigated by transmission electron microscopy. Macroscopic ferroelectric measurements have shown a large impact of the formation of dislocations and 90 degrees domain walls on the ferroelectric polarization and dielectric constant. A thermodynamic analysis using the Landau-Ginzburg-Devonshire approach that takes into account the ratio of the thicknesses of the two ferroelectric layers and electrostatic coupling is used to shed light on the experimental data.

引用

页数：7

共 49 条

[1] Can interface dislocations degrade ferroelectric properties?
Alpay, SP
Misirlioglu, IB
Nagarajan, V
Ramesh, R
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (11) : 2044 - 2046
[2] Effect of the electrode layer on the polydomain structure of epitaxial PbZr0.2Ti0.8O3 thin films
Alpay, SP
Nagarajan, V
Bendersky, LA
Vaudin, MD
Aggarwal, S
Ramesh, R
Roytburd, AL
[J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3271 - 3277
[3] Thermodynamics of polydomain heterostructures. III. Domain stability map
Alpay, SP
Roytburd, AL
[J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4714 - 4723
[4] AMANO H, 1999, MRS INTERNET J NITRI, V4
[5] Science and technology of thin films and interfacial layers in ferroelectric and high-dielectric constant heterostructures and application to devices
Auciello, Orlando
[J]. JOURNAL OF APPLIED PHYSICS, 2006, 100 (05)
[6] Dependence of the pyroelectric response on internal stresses in ferroelectric thin films
Ban, ZG
Alpay, SP
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (20) : 3499 - 3501
[7] BJORMANDER C, 1994, APPL PHYS LETT, V64, P3646, DOI 10.1063/1.111191
[8] Very large dielectric response of thin ferroelectric films with the dead layers
Bratkovsky, AM
Levanyuk, AP
[J]. PHYSICAL REVIEW B, 2001, 63 (13):
[9] Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites
Chu, MW
Szafraniak, I
Scholz, R
Harnagea, C
Hesse, D
Alexe, M
Gösele, U
[J]. NATURE MATERIALS, 2004, 3 (02) : 87 - 90
[10] ORIGIN OF FERROELECTRICITY IN PEROVSKITE OXIDES
COHEN, RE
[J]. NATURE, 1992, 358 (6382) : 136 - 138

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