High-Brightness InGaNGaN Power Flip-Chip LEDs

被引：11
作者：
Chang, Shoou-Jinn [1 ,2 ]
Chen, W. S. [1 ,2 ]
Shei, S. C. [3 ]
Kuo, C. T. [4 ]
Ko, T. K. [4 ]
Shen, C. F. [4 ]
Tsai, J. M. [1 ,2 ]
Lai, Wei-Chi [5 ]
Sheu, Jinn-Kong [5 ]
Lin, A. J. [4 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan
[4] Epistar Corp, Hsin Shi 744, Taiwan
[5] Natl Cheng Kung Univ, Inst Electroopt Sci & Engn, Tainan 70101, Taiwan
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2009年 / 27卷 / 12期
关键词：
Flip-chip; grinding; InGaN-GaN light emitting diodes (LEDs); rough sapphire surface; LIGHT-EMITTING-DIODES; NITRIDE-BASED LEDS; EXTRACTION EFFICIENCY; SAPPHIRE SUBSTRATE; GAN; SURFACE; IMPROVEMENT; CONTACTS; OUTPUT; LAYER;
D O I：
10.1109/JLT.2008.2005849
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface. © 2009 IEEE.
引用
收藏
页码：1985 / 1989
页数：5
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