Investigation of SOI photonic crystals fabricated by both electron-beam lithography and nanoimprint lithography

被引：22

作者：

Belotti, M

Galli, M

Bajoni, D

Andreani, LC

Guizzetti, G

Decanini, D

Chen, Y

机构：

[1] Univ Pavia, INFM, I-27100 Pavia, Italy

[2] Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[3] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

photonic crystals; electron beam lithography; nanoimprint;

D O I：

10.1016/j.mee.2004.02.078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication and optical measurements of Silicon On Insulator (SOI) nanostructures designed for photonic applications. Patterning was carried out by either electron beam lithography or nanoimprint lithography, followed by reactive ion etching with a SF6 and CHF3 gas mixture. The two-dimensional photonic lattices obtained were studied by scanning electron microscopy and by measuring photonic band dispersion above the light cone with Astratov coupling technique, showing a good agreement with the theoretical calculations. (C) 2004 Published by Elsevier B.V.

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收藏

页码：405 / 411

页数：7

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