Interfacial and Electrical Characterization in Metal-Oxide-Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric

被引：19
作者：
Chiu, Fu-Chien [1 ]
Chen, Shuang-Yuan [2 ]
Chen, Chun-Heng [3 ]
Chen, Hung-Wen [2 ]
Huang, Heng-Sheng [2 ]
Hwang, Huey-Liang [3 ]
机构：
[1] Ming Chuan Univ, Dept Elect Engn, Gui Shan 333, Taoyuan County, Taiwan
[2] Natl Taipei Univ Technol, Inst Mechatron Engn, Taipei 106, Taiwan
[3] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 30013, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期
关键词：
CURRENT CONDUCTION; MOS-TRANSISTORS; MOSFETS; CAPACITORS; STACKS;
D O I：
10.1143/JJAP.48.04C014
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Metal-oxide-semiconductor capacitors (MOSCs) and MOS field-effect transistors (MOSFETs) incorporating cerium dioxide (CeO2) dielectrics were fabricated and investigated. In this work, the electrical and interfacial properties were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements. The density of interface trap per unit area (N-it), the density of interface trap per unit area and energy (D-it), the energy distribution of interface trap density, and the effective capture cross section (sigma(s)) were studied in details. Experimental results showed that the N-it, D-it, and sigma(s) were about 3.4 x 10(10) cm(-1), 7.3 x 10(10) cm(-2) eV(-1), and 9.0 x 10(-11) cm(2), respectively. In addition, a comparison of interfacial properties among several gate dielectrics was made. (C) 2009 The Japan Society of Applied Physics
引用
收藏
页数：4
相关论文
共 23 条
[1]   Passivation of Ge(100)/GeO2/high-κ gate stacks using thermal oxide treatments [J].
Bellenger, F. ;
Houssa, M. ;
Delabie, A. ;
Afanas'ev, V. V. ;
Conard, T. ;
Caymax, M. ;
Meuris, M. ;
De Meyer, K. ;
Heyns, M. M. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2008, 155 (02) :G33-G38
[2]   The electrical and interfacial properties of metal-high-k oxide-semiconductor field effect transistors with CeO2/HfO2 laminated gate dielectrics [J].
Chang, Ingram Yin-Ku ;
Chen, Chun-Heng ;
Chiu, Fu-Chien ;
Lee, Joseph Ya-Min .
APPLIED PHYSICS LETTERS, 2007, 91 (20)
[3]   Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs [J].
Chen, H. W. ;
Chen, S. Y. ;
Chen, K. C. ;
Huang, H. S. ;
Liu, C. H. ;
Chiu, F. C. ;
Liu, K. W. ;
Lin, K. C. ;
Cheng, L. W. ;
Lin, C. T. ;
Ma, G. H. ;
Sun, S. W. .
APPLIED SURFACE SCIENCE, 2008, 254 (19) :6127-6130
[4]   Interface characterization and current conduction in HfO2-gated MOS capacitors [J].
Chen, H. W. ;
Chiu, F. C. ;
Liu, C. H. ;
Chen, S. Y. ;
Huang, H. S. ;
Juan, P. C. ;
Hwang, H. L. .
APPLIED SURFACE SCIENCE, 2008, 254 (19) :6112-6115
[5]   High-work-function Ir/HfLaO p-MOSFETs using low-temperature-processed shallow junction [J].
Cheng, C. F. ;
Wu, C. H. ;
Su, N. C. ;
Wang, S. J. ;
McAlister, Sean P. ;
Chin, Albert .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) :838-843
[6]   Current conduction mechanisms in CeO2 thin films [J].
Chiu, Fu-Chien .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (06) :H135-H137
[7]   Germanium FETs and capacitors with rare earth CeO2/HfO2 gates [J].
Dimoulas, A. ;
Panayiotatos, Y. ;
Sotiropoulos, A. ;
Tsipas, P. ;
Brunco, D. P. ;
Nicholas, G. ;
Van Steenbergen, J. ;
Bellenger, F. ;
Houssa, M. ;
Caymax, M. ;
Meuris, M. .
SOLID-STATE ELECTRONICS, 2007, 51 (11-12) :1508-1514
[8]   USE OF CHARGE PUMPING CURRENTS TO MEASURE SURFACE STATE DENSITIES IN MOS-TRANSISTORS [J].
ELLIOT, ABM .
SOLID-STATE ELECTRONICS, 1976, 19 (03) :241-247
[9]   A RELIABLE APPROACH TO CHARGE-PUMPING MEASUREMENTS IN MOS-TRANSISTORS [J].
GROESENEKEN, G ;
MAES, HE ;
BELTRAN, N ;
DEKEERSMAECKER, RF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (01) :42-53
[10]   SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS [J].
GROVE, AS ;
FITZGERALD, DJ .
SOLID-STATE ELECTRONICS, 1966, 9 (08) :783-+
123