Dual-Band CMOS Injection-Locked Frequency Divider with Variable Division Ratio

被引：7

作者：

Jang, Sheng-Lyang ^{[1
]}

Lin, Chih-Yeh ^{[1
]}

Liu, Cheng-Chen ^{[1
]}

Huang, Jhin-Fang ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2009年 / E92C卷 / 04期

关键词：

dual-band; injection-locked frequency divider; 0.18 mu m CMOS; LC-tank oscillator; WIDE LOCKING RANGE;

D O I：

10.1587/transele.E92.C.550

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dual band 0.18 mu m CMOS LC-tank injection locked frequency divider (ILFD) is proposed. The ILFD circuit is realized with a cross-coupled pMOS LC-tank oscillator with an inductor switch for frequency band selection. The self-oscillating VCO is injection-locked by nth-harmonic input to obtain the division factor of n. The division ratio of 1, 2, and 3 has been found for the proposed ILFD. Measurement results show that at the supply voltage of 1.1 V, the free-running frequency is front 2.28(3.09) GHz to 2.78(3.72) GHz for the low- (high-) frequency band. The power consumption of the ILFD core is 3.7 mW (6.2 mW) at low (high) band. The total area including the output buffer and the pads is 0.841 x 0.764 mm(2).

引用

页码：550 / 557

页数：8

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