Towards Low-Power High-Efficiency RF and Microwave Energy Harvesting

被引:181
作者
Hemour, Simon [1 ]
Zhao, Yangping [1 ]
Lorenz, Carlos Henrique Petzl [1 ]
Houssameddine, Dimitri [2 ]
Gui, Yongsheng [3 ]
Hu, Can-Ming [3 ]
Wu, Ke [1 ]
机构
[1] Ecole Polytech, Polygrames Res Ctr, Montreal, PQ H3C 3A7, Canada
[2] Everspin Technol, Chandler, AZ 85224 USA
[3] Univ Manitoba, Dept Phys & Astron, Winnipeg, MB R3T 2N2, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Low-power and high-efficiency energy harvesting; magnetic tunnel junction (MTJ); microwave power transmission; rectifier; Schottky diode; signal detection; spin polarized transport; SPIN-TRANSFER TORQUE; VOLTAGE-DEPENDENCE; RECTENNA; TRANSMISSION; DIODES;
D O I
10.1109/TMTT.2014.2305134
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Since the very beginning of RF and microwave integrated techniques and energy harvesting, Schottky diodes are most often used in mixing and rectifying circuits. However, in specific W power-harvesting applications, the Schottky diode technique fails to provide a satisfactory RF-dc conversion efficiency mainly because of its high zero-bias junction resistance. This paper examines the state-of-the-art low-power microwave-to-dc energy conversion techniques. A comprehensive picture of the state-of-the-art on this aspect is given graphically, which compares different technologies such as transistor, diode, and CMOS schemes. Subsequent to the highlighted limitations of current devices, this work introduces, for the first time, a nonlinear component for low-power rectification based on a recent discovery in spintronics, namely, the spindiode. Along with an analysis of the role of nonlinearity and zero bias resistance in the rectification process of the spindiode, it is shown how the spindiode could enhance the rectification efficiency even at a very low-power level and how this technique would shift the design paradigms of diode-based devices and circuits.
引用
收藏
页码:965 / 976
页数:12
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