Effect of crystallization on the reliability of unipolar resistive-switching in HfO2-based dielectrics

被引：5

作者：

Saleh, M. N. ^{[1
]}

Venkatachalam, D. K. ^{[1
]}

Elliman, R. G. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

CURRENT APPLIED PHYSICS | 2014年 / 14卷

基金：

澳大利亚研究理事会;

关键词：

ReRAM; Resistive switching; Hafnium oxide; Hafnium silicate; Grain boundary; Amorphous; Unipolar switching; PHASE-SEPARATION; SILICATE FILMS; MEMORY; RRAM;

D O I：

10.1016/j.cap.2013.11.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electroforming and unipolar resistive switching characteristics of as-deposited and annealed HfO2 and Hf0.6Si0.4O2 films are reported. The reliability of HfO2 devices is shown to be significantly degraded by annealing at 600 degrees C, during which the film is observed to crystallize. In contrast, the characteristics of Hf0.6Si0.4O2 devices subjected to the same annealing conditions are found to be unchanged, consistent with the fact that the films remain amorphous. These differences are attributed to the presence of grain boundaries and can have important implications for the use of HfO2 in ReRAM applications. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：S88 / S92

页数：5

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