Probing the surface potential of oxidized silicon by assessing terahertz emission

被引：28

作者：

Mochizuki, Toshimitsu ^{[1
]}

Ito, Akira ^{[2
]}

Mitchell, Jonathon ^{[1
]}

Nakanishi, Hidetoshi ^{[2
]}

Tanahashi, Katsuto ^{[1
]}

Kawayama, Iwao ^{[3
]}

Tonouchi, Masayoshi ^{[3
]}

Shirasawa, Katsuhiko ^{[1
]}

Takato, Hidetaka ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Fukushima Renewable Energy Inst, 2-2-9 Machiikedai, Koriyama, Fukushima 9630298, Japan

[2] SCREEN Holdings Co Ltd, Fushimi Ku, 322 Fukukawa Cho, Kyoto, Kyoto 6128486, Japan

[3] Osaka Univ, Inst Laser Engn, 2-6 Yamadaoka, Suita, Osaka 5650871, Japan

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 16期

关键词：

CARRIER DYNAMICS; GENERATION; PULSES;

D O I：

10.1063/1.4980847

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using laser terahertz emission microscopy, we measured laser-excited terahertz (THz) emission from silicon wafers with silicon-oxide passivation layers, revealing a strong correlation between the THz waveform and the surface potential. The surface potential was electrically tuned by a semitransparent top electrode disc and evaluated by measuring capacitance-voltage characteristics. The waveform changed with external bias and inverted near the flatband voltage, and changes appeared in the peak amplitude were similar to the capacitance-voltage characteristics. These results indicate that by analyzing the waveform of laser-excited THz emission generated by laser terahertz emission microscopy, we could quantitatively measure and map the internal field of surface band bending in semiconductors. Published by AIP Publishing.

引用

页数：5